填充式方钴矿化合物CeOs4Sb12近藤相互作用的非弹性中子散射研究

CeOs₄Sb₁₂晶体中由于导电电子与Ce³⁺ 4f¹电子之间存在c-f杂化作用导致费米面附近存在能量间隙.这种c-f近藤相互作用和能量间隙是理解CeOs₄Sb₁₂物理性质，如近藤绝缘体行为、Ce³⁺磁矩在低温下猝灭以及重费米性等电、磁性质的关键.当用LAM-D中子谱仪对粉末CeOs₄Sb₁₂进行测量时，可以得到不同温度下CeOs₄Sb₁₂的非弹性中子散射谱.结果表明CeOs₄Sb₁₂中存在近藤相互作用，其作用强度为3.1 meV，证实了CeOs₄Sb₁₂为近藤绝缘体.中子测量得出CeOs₄Sb₁₂德拜温度为317 K. 关键词： 非弹性中子散射 填充式方钴矿 近藤绝缘体

Kondo interactions in the CeOs4Sb12 skutterudite studied by inelastic neutron scattering

The energy gap near Fermi surface due to the hybridization of Ce³⁺ 4f¹ and conduction electrons is the key to understand the physical properties of the CeOs₄Sb₁₂ compound, such as Kondo insulating behavior, moment quench of Ce³⁺ at low temperatures and the characteristics of heavy fermion. In this work, inelastic neutron scattering spectra of powder CeOs₄Sb₁₂ sample were collected at different temperatures using LAM-D neutron spectrometer at KEK pulsed neutron source. The result indicates that the CeOs₄Sb₁₂ skutterudite is a Kondo insulator with a c-f interaction of 3.1 meV. The Debye temperature is determined as 317 K.