自控液晶光阀组式光刻快门研究

通过理论推导，构建了抗蚀剂的感光特性、光源的光效与曝光量之间的数学模型，为液晶光阀代替穿孔带提供了理论依据.结合液晶光阀的工作原理和光刻快门的控制原理，对液晶光阀组的控制进行了研究并给出了其控制电路图.通过实际光刻试验，自控液晶光阀组光刻快门机构可以完成编码图案的控制，通光控制达到了预计要求，刻出的图案清晰，线条陡直.证明液晶光阀组替代穿孔带用作光刻快门是完全可行的.     

氟化氢与涂有聚合物膜下二氧化硅的反应研究

ＨＦ与ＳｉＯ２的反应是一种亲核取代反应，但高温下此反应不能发生．当涂覆在ＳｉＯ２表面的聚合物膜中含有某些特殊的有机化合物或超强酸时，可以促进该反应的发生，这些化合物被称为诱蚀剂．诱蚀剂分三类：（１）三级胺与ＨＦ形成季铵盐得到浓度很高的氟阴离子使该反应很容易发生；（２）强的偶极非质子官能团化合物与ＨＦ中的氢形成氢键使氟的亲核活性增加，有助于该反应发生；（３）超强酸因其质子对ＳｉＯ２骨架中氧的牢固结合能力活化了反应的离去基团，对ＨＦ与ＳｉＯ２的亲核反应起到催化作用．聚合物膜对添加在其中的小分子诱蚀剂起到阻止逃逸的栅栏作用，而本身带有诱蚀官能团的聚合物可以同时充当成膜物及诱蚀剂的作用．通过光化学反应可以选择性地实现聚合物膜下ＨＦ与ＳｉＯ２的刻蚀反应．     

Patterning porous matrices and planar substrates with quantum dots

Silica hydrogels and planar substrates were patterned with CdS nanoparticles using a photolithographic method based on the photo dissociation of thiols and cadmium-thiolate complexes. Silica hydrogels were prepared via a standard base-catalyzed route. The solvent was exchanged with an aqueous solution of CdSO₄ and 2-mercaptoethanol, and the samples were then exposed to a focused ultraviolet beam. Planar substrates were patterned by illuminating a precursor solution spin coated on the substrates. CdS nanoparticles formed in the illuminated spots, and had a diameter below about 2 nm. The diameter of the spots illuminated by the UV beam could be varied from a few hundred to a few μm, on both hydrogels and planar substrates. Samples were characterized with transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical absorption, photoluminescence and Raman spectroscopies. All these techniques confirmed the chemical identity of the CdS nanoparticles. To investigate the mechanism of nanoparticle formation, we took absorption spectra of the precursor solution as a function of irradiation time. In unirradiated solutions, we noticed a maximum at 250 nm, characteristic of Cd-thiolate complexes. The absorption at 250 nm decreased with increasing irradiation time. A new band appeared at 265 nm for exposures around 5 min, and that band shifted to 290 nm in samples exposed for 10 min. A yellow precipitate formed after about 30 min. XRD showed that the precipitate was cubic CdS, with a mean particle size of 1.4 nm. We attribute formation of CdS to the photodissociation of the thiols and of the Cd-thiolates. UV irradiation of these precursors yields a series of species that can react with Cd²⁺, such as RS^·, S²⁻ and H₂S. Small CdS nanoparticles form in the initial stages of illumination, and present absorption bands in the 265–290 nm region. These CdS aggregates grow, coalesce and precipitate for longer irradiation times.     

Low-temperature, solution processing of TiO2 thin films and fabrication of multilayer dielectric optical elements

High-quality TiO₂ thin films have been deposited from aqueous titanium-peroxo solutions via spin coating. The effects of precursor solution pH on the crystallization behavior, morphology, density, and refractive index of the films are reported. From X-ray diffraction measurements, the amorphous as-deposited films are found to crystallize in the anatase phase at 250 °C. Surface and cross-section SEM images reveal that films deposited from an acidic precursor are more uniform and denser than those deposited from a basic precursor. X-ray reflectivity measurements show that films with smooth surfaces and high densities (up to 87% of single-crystal anatase) can be produced at temperatures as low as 300 °C. Measured densities are consistent with high refractive indices at 633 nm of 2.24 and 2.11 for films derived from acidic and basic precursors, respectively. The uniformity and dense nature of the films have allowed fabrication of multilayer dielectric optical elements with thermal processing at only 300 °C. The distributed Bragg reflector with four bilayers exhibits a reflectance of 92% and a stop band width of 150 nm. The optical microcavity has a quality factor of 20. The optical properties of all elements agree well with theoretical models, indicating good optical quality. Use of the precursor chemistry for direct photopatterning of TiO₂ films without a polymer resist is also demonstrated.     

一种新型微透镜阵列成象式投影光刻系统的研究

从理论和实验两方面入手,系统地研究了微透镜阵列的形成原理和制作工艺,分析了微透镜阵列的面形结构,得到了联系微透镜阵列矢高与制作工艺参量的经验公式.并且将四片微透镜阵列耦合,形成一个深紫外光刻的1:1成象的多孔径微小光刻系统.从几何光学理论出发,分析了这个光刻系统综合成象的特点,讨论了这种光刻系统的光学性能,并给出了实验测量方法.     

Silver Microelectrode Arrays for Direct Analysis of Hydrogen Peroxide in Low Ionic Strength Samples

Silver microelectrode arrays are fabricated by photolithography for a one-step analysis of H₂O₂ in low ionic strength samples. The effects of electrode length, width, band-to-band separation, connection height, and adhesion layer are evaluated. The developed sensor shows excellent repeatability (RSD=1.20 % (n=5)) and reproducibility (RSD=1.12 % (n=5)) with the linear range of 0.0–10.0 mM, the sensitivity of 9.84±0.34 μA mM⁻¹, and the detection limit of 22.69 μM. The sensor has been successfully applied to detect H₂O₂ directly without the addition of supporting electrolyte in synthetic urine, tap water, drinking water, and milk samples.     

高温超导滤波器的光刻工艺

根据高温超导薄膜的特点,详细讨论了制备高温超导滤波器的光刻技术及在制备的各环节中需注意的问题,实验结果表明:此种方法提高了制备的成功率。     

Patterning of oxide-hardened gold black by photolithography and metal lift-off

A method to pattern infrared-absorbing gold black by conventional photolithography and lift-off is described. A photo-resist pattern is developed on a substrate by standard photolithography. Gold black is deposited over the whole by thermal evaporation in an inert gas at ∼1 Torr. SiO₂ is then deposited as a protection layer by electron beam evaporation. Lift-off proceeds by dissolving the photoresist in acetone. The resulting sub-millimeter size gold black patterns that remain on the substrate retain high infrared absorption out to ∼5 μm wavelength and exhibit good mechanical stability. This technique allows selective application of gold black coatings to the pixels of thermal infrared imaging array detectors.     

Active Micromachined Integrated Terahertz Circuits

Schottky barrier diodes have been integrated into on-chip rectangular waveguides. Two novel techniques have been developed to fabricate diodes with posts suitable for integration into waveguides. One technique produces diodes with anode diameters of the order of microns with post heights from 90 to 125 microns and the second technique produces sub-micron anodes with post heights around 20 microns. A method has been developed to incorporate these structures into a rectangular waveguide and provide a top contact onto the anode which could be used as an I.F. output in a mixer circuit. Devices have been fabricated and D.C. characterized.     

无铬相移掩模光刻技术

本文论述了相移掩模(PSM)提高光刻分辨率的基本原理、主要类型、无铬PSM的制作方法,简述了曝光实验和实验结果.用NA=0.28的g线光刻机得到了0.5μm的实际分辨率.