On the possibility of designing interacting semiconductor quantum wells with zero perturbation coupling

The paper describes the possibility of designing matched interacting semiconductor quantum wells. It is shown that for a given eigenstate of a quantum well (QW), it is always possible to find another QW in such a way that the coupling leaves the original eigenstate of the host QW unperturbed irrespective of the strength of interaction. For rectangular QWs, the condition is met with whenever the second QW has appropriate width and depth so that phase travelled by an electron wave through it is an integral multiple of π.     

Effects of electronic state modulation on the high-frequency response characteristics of GaAs quantum wells

The effect of electronic-state modulation on the high frequency response of GaAs quantum well with thin inserted barrier layer is studied. The carrier scattering by polar optic phonons, acoustic deformation potential and background ionized impurities are incorporated in the present calculations considering the carrier distribution to be heated drifted Fermi-Dirac distribution. Modified phonon spectra and modulated electron wave function give different values of form factor compared to bulk mode phonon. Mobility is found to be enhanced on insertion of thin layer inside the quantum well. The ac mobility and the phase lag increases with the increase in both the channel width and the 2D carrier concentration. Cutoff frequency, where ac mobility drops down to 0.707 of its low frequency value, is observed to be enhanced reflecting better high frequency response.     

Neutron powder diffraction and superconductivity in Ca substituted Bi-0212

In the system Bi-0212 the carrier concentration can be changed by both cation substitution and oxygen content. The crystal structure of Ca substituted material was refined from neutron powder diffraction data for Bi_0.5Sr_1.5Ca_0.5Y_0.5Cu_1.5Fe_0.5O_y. It is shown that extra oxygen is introduced in the cation layers between the double sheets of Cu/O pyramids. In superconducting material the familar dependence ofT _c on the hole carrier concentration is observed. The higherT _c is situated at 75 K.     

Asymmetric local displacements in the Bi2Sr2CaCu2O8+β superconductor

Instantaneous in-plane Cu-O bond distribution in the Bi₂Sr₂CaCu₂O_8+β (Bi2212) superconductor has been investigated by high k-resolution Cu K-edge extended X-ray absorption fine structure (EXAFS) measured with polarized vector parallel to the two orthogonal Cu-O-Cu bonds of the CuO₂ square plane. The results show an anisotropic Cu-O distribution in the two directions and provide further information on the local atomic displacements in the lattice-charge stripes. Received 5 June 2000     

Anisotropy of the electron momentum distribution in Bi2Sr2CaCu2O8+δ superconductor studied by positron annihilation

The temperature dependent (30-300 K) Doppler broadening of the positron annihilated γ-radiation measurement has been investigated on single crystalline Bi₂Sr₂CaCu₂O_8+δ (Bi-2212) high T_c superconducting samples along two different crystallographic orientations. It has been observed that throughout the temperature range the electron momentum distribution has a larger value along the crystallographic c-axis than in the a-b plane. The temperature dependent Doppler broadened positron annihilation γ-radiation lineshape analysis shows a step like increase of S-parameter at the temperature region 92-116 K.     

Flux trapping in a macroscopic cylinderical hole drilled in Bi-Sr-Ca-Cu-O

The flux dynamics in a polycrystalline sample of Bi_1.7Pb_0.3Sr₂Ca₂Cu₃O_x with a macroscopic cylindrical hole (CH) drilled was investigated by slow transport relaxation (V-t curves) and magnetovoltage measurements (V-H curves). It was monitored that there are several discontinuities in the time evolution of quenched state in V-t curves, which was attributed to the leaving of quantized flux lines trapped through CH together with surface superconducting effects. We observed that asymmetric V-H curves demonstrate unusual remarkable counter clockwise hysteresis effects upon cycling of field. This interesting result was correlated mainly to the flux trapping inside the CH that acts as a macroscopic attractive pinning center for flux lines. Further, the hysteresis effects in V-H curves for a fixed transport current provide a direct evidence that the number of flux lines, measured dissipation and relative decrease/increase in irreversibilities could be determined by sweeping rate of external magnetic field (dH/dt) which leads also to peculiar time effects.     

Ballistic spin interferometer based on the Rashba and Dresselhaus spin-orbit interactions

By using the Al'tshuler-Aronov-Spivak (AAS) model, we give the amplitude changing with Rashba spin-orbit interaction (SOI) and Dresselhaus SOI strength. In the first idea 1D square loop (SL), Rashba SOI acts on two sides while Dresselhaus SOI acts on the other two sides. In the second SL, we consume Rashba SOI and Dresselhaus SOI act on four sides simultaneously. This model can be replaced by another one that Rashba SOI and Dresselhaus SOI act on every side independently, and each side is twice long. We theoretically illustrate the influence of the Dresselhaus SOI on node position and number. To explain the “half oscillation” phenomenon found in experiment, we apply Dresselhaus SOI to the ideal 1D SL. The conclusion is that the Dresselhaus SOI has a strong effect on the emergence of “half oscillation”.     

Reproducible resistive switching effect for memory applications in heterocontacts based on strongly correlated electron systems

The transitional processes in heterocontacts based on strongly correlated electron systems (SCES) are studied for analyzing of the effect of resistive switching (ERS). It has been shown that the process is asymmetric with respect to switching into “on” and “off” states, the switching time is controlled by a voltage level, this time can be less than microseconds, on the other hand, relaxation processes can reach tens seconds. The switching is controlled by two processes: a change in the resistance state of the normal metal/SCES interface under effect of electric current field and by electrodiffusion of oxygen to vacancies, at that the doping level of the contact area and resistive properties of the heterocontact change. In particular, electrodiffusion of mobile oxygen induced by the electric field makes it possible to use a device with ERS as a memristor. On the other hand, a possibility to control the switching time and ON and OFF parameters show the possibilities to use these devices as memory elements “RAM”.     

Electrical conductivity studies in single and mixed alkali doped cobalt-borate glasses

The glasses of the type (Li₂O)_x-(CoO)_0.2-(B₂O₃)_0.8−x and (Li₂O)_0.2-(K₂O)_x-(CoO)_0.2-(B₂O₃)_0.6−x were prepared by melt quench technique and their non-crystallinity has been established by XRD studies. The glasses were investigated for room temperature density and dc electrical conductivity in the temperature range 300-550 K. Molar volumes were estimated from density data. Composition dependence of density and molar volume in both the sets of glasses has been discussed. Conductivity data has been analyzed in the light of Mott’s Small Polaron Hopping (SPH) Model and activation energies were determined. Variation of conductivity and activation energy with Li₂O content in single alkali glasses indicated change over conduction mechanism from predominantly electronic to ionic, at 0.4 mole fraction of Li₂O. In mixed alkali glasses, the conductivity has passed through minimum and activation energy has passed through maximum at x = 0.2. This has been attributed to the mixed alkali effect. It is for the first time that a change over of predominant conduction mechanism in lithium-cobalt-borate glasses and mixed alkali effect in lithium-potassium-cobalt-borate glasses has been observed. Various physical and polaron hopping parameters such as polaron hopping distance, polaron radius, polaron binding energy, polaron band width, polaron coupling constant, effective dielectric constant, density of states at Fermi level have been determined and discussed.