Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm^2 and a slope efficiency of 0.02 W/A. The 1542nm laser output exits mainly from the Si waveguide.     

High-Power Electroabsorption Modulator Using Intrastep Quantum Well

An electroabsorption modulator using the intrastep quantum well （IQW） active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency IOdB/V and low capacitance （〈 0.42 pF）, with which an ultra high frequency （〉 15 GHz） can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.     

抗泥石流冲击吊脚楼房屋结构竞赛模型设计

介绍了一种抗泥石流冲击吊脚楼房屋结构竞赛模型的设计方案.该方案采用框架结构,在底层空心楼面梁中内置了能量转换梁,能量转换梁上表面在上部子结构柱支承处设置有斜面,能量转换梁在撞击后产生水平位移的同时能够带动上部子结构的升高,将外部撞击的水平动能转换为上部子结构升高所需的势能.给出了这种结构的细部构造设计方案,并进行了力学的概念分析和简化的结构计算.实验表明模型结构的抗撞击性能良好.     

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well （MQW） complex-coupled distributed feedback （DFB） laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W·A^-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.