Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates |
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| Authors: | CHENG Yuan-Bing WANG Yang SUN Yu PAN Jiao-Qing BIAN Jing AN Xin ZHAO ling-juan WANG Wei |
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| Institution: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Abstract: | A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26mA, a slope efficiency of 0.14W・A-1 and a side mode suppression ratio of 40dB together with a 3dB bandwidth of more than 8GHz. The device is suitable for 10Gbit/s optical fiber communication. |
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| Keywords: | 42 55 Px 81 15 Gh 78 66 -w |
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