Sputtering pressure influence on growth morphology,surface roughness,and electrical resistivity for strong anisotropy beryllium film

The strong anisotropy beryllium （Be） films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the （101） crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p 〈 0.8 Pa, while it increases drastically at p 〉 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 μΩ m to 2.7 μΩ m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.     

BeH2薄膜的制备及红外特性

采用蒸发铍原子与非平衡态氢原子反应制备了透明的BeH2薄膜.扫描电子显微镜(SEM)观察到薄膜表面存在微孔洞,红外光谱显示在722 cm-1有一个强烈的吸收峰.采用密度泛函理论(DFT)对BeH2网状结构进行了计算,得到的3个基本振动模式的频率和强度与文献中BeH2粉末的实验数据基本一致,其中弯曲振动的计算频率为747...     

Be靶丸的研制进展及其关键技术北大核心CSCD

可控核聚变反应是科学家用来解决能源缺乏和发展可持续能源的理想途径,为此美国开展了惯性约束聚变(ICF)研究,建设了国家点火装置(NIF),旨在实验室演示核聚变反应,为惯性约束聚变能(IFE)发展指明方向。制靶是NIF点火工程三大主体之一,如何制备满足设计需求的靶丸成为科学家不懈努力的追求目标。详细介绍了NIF工程中主要候选Be靶丸需求背景、研究现状、Be靶优势、靶参数设计要点、靶丸制备技术,以及制靶过程中存在的关键技术问题,为我国Be靶制备及制靶能力建设提供参考信息。     

二乙基铍与二叔丁基铍热解机理的理论计算

考虑了各种可能的自由基和多渡态裂解反应通道,采用分子体系第一性原理计算研究了二乙基铍与二叔丁基铍单分子热解机理．分别用B3LYP、CCSD(T)和G3B3研究了分子裂解反应的势能面,给出了各反应物、产物和过渡态的几何结构、振动频率和相对能量．结果显示从热力学角度,对于上述两个分子,其主要的热解均是通过协同消除的过渡态反应而进行的．分析了这两个分子热解势能面的差 异,并计算了相关反应通道的反应焓变和反应速率常数．