Localized Plastic Deformation of Metal-Intermetallic Laminated Composites after Equal Channel Angular Pressing

Russian Physics Journal - The paper presents mathematical simulation of localized plastic deformation of metal-intermetallic laminated composites after equal channel angular pressing. Deformation...     

Formation of extended compound dislocations and barriers in the course of interdislocation reactions in FCC crystals

The behavior of compound dislocations under stress loading is considered. Dislocation configurations are onsidered for an arbitrary asymmetric intersection of reacting dislocation segments. It is demonstrated that depending on the character of dislocation segment intersection, compound dislocations of two types can be formed, one of which is destructed under increasing stress loading. In the other case, the length of the compound dislocation increases, thereby causing the formation of long extended barriers. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 25–30, March, 2009.     

Calculations of Lengths of Dislocation Combinations in FCC Crystals

In the present work, lengths of dislocation combinations formed as a result of interaction of reacting dislocations in noncoplanar glide systems are calculated. A new model is suggested in which the geometry of dislocation combination is considered for an arbitrary asymmetrical intersection of dislocation segments. The lengths of dislocation combinations are determined on the example of one dislocation reaction. The statistics of an arbitrary intersection of the reacting dislocations are considered for an arbitrary (from screw to edge) orientation of a glissile dislocation.     

Interaction of shockley partial dislocations with reacting forest dislocations

Dislocation combinations formed as a result of interaction between a glissileBσ,d Shockley partial dislocation with reacting undissociated forest dislocations are considered. The value of the parameters characterizing the strength <k> of the dislocation combinations, the probability β_r of their formation, and the interaction intensity α_r of the reacting dislocations are determined for an orientation of the [100] deformation axis of an FCC single crystal for all components of the dislocation loop. Tomsk State Architectural-Building Academy. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 3–8, May, 1997.