基于柠檬酸的石墨烯量子点的制备及其应用

石墨烯量子点（GQDs）是一种新型碳基准零维材料,不但具有石墨烯的独特平面结构,同时具备碳点的量子限制效应和边界效应。GQDs具有独特的光学性质、低毒性、高荧光稳定性和高生物相容性,被广泛应用于检测、传感、催化、细胞成像、药物递送和污染治理等领域。GQDs的合成分为自上而下法和自下而上法,前者将大尺寸的石墨烯、石墨、碳材料切割成纳米级的量子点,后者使用不同的前驱体,通过水热法、热裂解法等方法合成石墨烯量子点。柠檬酸（CA）是一种重要的有机酸,室温下是白色结晶状粉末,是自下而上法合成GQDs的一种常用前驱体,近年来有许多关于以CA为前驱体合成不同GQDs的研究,以CA为前驱体合成的GQDs（CA-GQDs）在生物医药、荧光检测、成像等领域均有应用,具有较好的应用前景。对近年来基于CA的合成方法和具体应用进行了总结和回顾,旨在将现有CA-GQDs的相关成果尽可能汇总和展现,以对相关领域研究工作者提供一定参考,并对未来CA-GQDs较有前景的研究方向进行了展望。     

Low-potential amperometric determination of purine derivatives through surface oxide regeneration method

This article described a novel amperometry which can be used for determination of purine derivatives including uric acid, xanthine, hypoxanthine, guanine, and adenine without surface contamination. By applying a constant potential of −0.125 V (vs. Ag/AgCl) in a flow injection system, the chelating capability of these purine derivatives converts the cuprous oxide layer into a soluble complex. This behavior would dissolve the passive oxide layer and expose the bottom copper layer to the solution, subsequently; an oxidation current which attributed to the regeneration of the original cuprous oxide layer is used to reflect the concentration of these purine derivatives. In a 50 mM phosphate buffer, pH 7.0, this approach provides a high sensitivity with LOQ of sub-micro molar level of five purines and high stability with a RSD of 2.5% for 10 μM xanthine (N = 12). This method does not suffer from most biological species including ascorbic acid, acetaminophen, creatine, dopamine, sarcosine, ammonium ion, chloride ion, and urea at equal or higher than its physiological concentration.     

3，5-二硝基水杨酸和菲咯啉构筑的两个镧配合物的合成、晶体结构及荧光性质

以3,5-二硝基水杨酸（H₂dns）和菲咯啉（phen）为配体合成了2个新的镧配合物[La₂（dns）₂（Hdns）₂（phen）₄]（1）和[La₄（dns）₆（phen）₆]（2）,并对它们进行了红外分析、元素分析、热重分析和单晶结构分析。单晶衍射结果表明,配合物1和2均为三斜晶系,P1空间群。配合物1和2中La（Ⅲ）通过配体H₂dns桥联分别形成双核结构和四核结构。热重和荧光分析表明：2热稳定性高于1,1和2均在467 nm处有最强荧光发射强度。     

基于编码超表面的太赫兹宽频段雷达散射截面缩减的研究

本文设计了一种柔性, 非定向低散射的1bit编码超表面, 实现了太赫兹宽频带雷达散射截面的缩减. 这种设计基于对“0”和“1”两种基本单元进行编码, 其反射相位差在很宽的频段范围内接近180°, 为一种非周期的排列方式, 该电磁超表面使入射的电磁波发生漫反射, 从而实现雷达散射截面的缩减. 全波仿真结果表明, 在垂直入射条件下, 编码超表面的镜像反射率低于-10 dB的带宽频段范围为1.0-1.4 THz, 该带宽内超表面相对同尺寸金属板可将雷达散射截面所减量达到10 dB以上, 最大缩减量达到19 dB. 把柔性编码表面弯曲在直径为4 mm的金属圆柱面上, 雷达散射截面的所减量高于10 dB以上的带宽频段范围为0.9-1.2 THz, 仍然可实现宽频带缩减特性. 总之, 编码超表面为调控太赫兹波提供一种新的途径, 将在雷达隐身、成像、宽带通信等方面具有重要的意义.     

“薄膜即是界面，界面即是薄膜”：二维有机半导体晶体的研究进展

自首次于聚乙炔发现导电现象以来,具有共轭结构的有机半导体材料赖其种类丰富多样、 制备工艺简捷低耗、以及优异的机械柔性等特点,在“后硅时代”中有望以先进光电子设备展现 其广阔前景,因而多年来备受学界和产业界的瞩目。如何进一步阐明有机半导体中结构和性能之 间的关系,探索电荷载流子微观动力学行为,构筑高性能、新功能的有机光电子器件,是当下有 机电子学领域的前沿核心问题,也是保证其持续发展的基石。近年来,二维有机半导体晶体材料 在秉持高度有序的分子排列与极低的杂质缺陷浓度等优点的同时,更是以“薄膜即是界面、界面 即是薄膜”为一帜,克服传统体材料在研究与应用中的瓶颈,为揭示材料构性关系及其中基本物 理过程提供了良好的平台,也是实现多样化的新型有机光电子器件的理想材料,有望为微纳电子 领域带来新一轮变革。本文从二维有机半导体晶体的制备工艺、电荷载流子微观动力学行为,再 到新型器件的光电功能应用等方面,综述了最新研究进展,做出总结和展望,并提出目前面临的 挑战及未来研究方向,旨在为进一步深入理论研究,结合有机材料与先进技术,推动有机电子学 的发展提供有益帮助。     

New chiral liquid crystal monomers and cholesteric polyacrylates: synthesis and characterisation

The synthesis of new chiral monomers (M₁ ?M₃ ) based on menthol and the corresponding polyacrylates (P₁ ?P₃ ) is described. The chemical structures, formula and phase behaviour of the obtained monomers and polymers were characterised with FT-IR, ¹H-NMR, elemental analyses, differential scanning calorimetry (DSC), polarising optical microscopy (POM) and X-ray diffraction (XRD). The effect of the mesogenic core rigidity, spacer length and menthyl steric effect on the phase behaviour of M₁ ?M₃ and P₁ ?P₃ is discussed. The expected mesophase of the compounds based on menthol can be obtained by inserting a flexible spacer between the mesogenic core and the terminal groups. For the chiral monomers and polyacrylates, their corresponding melting temperature (T _m), glass transition temperature (T _g) and clearing temperature (T _i) increased with an increase of the mesogenic core rigidity; while the T _m, T _g and T _i decreased with increasing the spacer length. M₁ and P₁ showed no mesophase, while M₂ and M₃ all revealed a SmC* and cholesteric phases. P₂ and P₃ only showed a cholesteric phase.     

激光调频连续波测距的精度评定方法研究

基于双光纤光路等光频重采样原理,提出了一种距离精度的评定方法.通过推导噪声背景下等光频重采样信号中距离参量的克拉美-罗下边界,得到了影响系统测距精度的两个重要因素:信噪比和扫描带宽,并进行了实验验证.实验表明,该评价方法并不会受到任何距离估算方法的影响,根据此方法可以选择一个最优的距离估算方法.通过对两个影响精度的因素进行仿真分析可知,在扫描带宽为2.2 nm时,若将测量光路的信噪比提升至70 dB以上,系统可获得低于10μm的测距精度.该精度评定方法可为后续改善调频连续波测距系统性能提供理论参考.     

Wave propagation in an inhomogeneous transversely isotropic material obeying the generalized power law model

The analytical solutions for body-wave velocity in a continuously inhomogeneous transversely isotropic material, in which Young’s moduli (E, E′), shear modulus (G′), and material density (ρ) change according to the generalized power law model, (a+b z) ^c , are set down. The remaining elastic constants of transversely isotropic media, ν, and ν′ are assumed to be constants throughout the depth. The planes of transversely isotropy are selected to be parallel to the horizontal surface. The generalized Hooke’s law, strain-displacement relationships, and equilibrium equations are integrated to constitute the governing equations. In these equations, utilizing the displacement components as fundamental variables, the solutions of three quasi-wave velocities (V _SV , V _P ,?V _SH ) are generated for the present inhomogeneous transversely isotropic materials. The proposed solutions are compared with those of Daley and Hron (Bull Seismol Soc Am 67:661–675, (1977)), and Levin (Geophysics 44:918–936, (1979)) when the inhomogeneity parameter c?=?0. The agreement between the present results and previously published ones is excellent. In addition, the parametric study results reveal that the magnitudes of wave velocity are remarkably affected by (1) the inhomogeneity parameters (a, b, c); (2) the type and degree of material anisotropy (E/E′, ν/ν′, G/G′); (3) the phase angle (θ); and (4) the depth of the medium (z). Consequently, it is imperative to consider the effects of inhomogeneity when investigating wave propagation in transversely isotropic media.     

Low-threshold strained multi-quantum well lasers fabricated by selective metalorganic vapor phase epitaxy without a semiconductor etching process

Strained InGaAsP multi-quantum well (MQW) buried hetero- (BH) laser diodes (LDs) on a p-InP substrate were fabricated by selective metalorganic vapor phase epitaxy (MOVPE). In the laser fabrication process, both the strained MQW active layer and current blocking structure were directly formed by selective MOVPE without a semiconductor etching process. This novel laser fabrication process produces extremely uniform device characteristics that are essential to the deployment of optical subscriber systems. Furthermore, important device design parameters (e.g. the active stripe shape or the leakage current path configuration) are precisely controlled by only the epitaxial growth steps. This highly controllable laser fabrication method results in a very low-threshold current with excellent uniformity (I_th = 1.78 ± 0.19 mA) for 20 consecutive LDs (L = 200 μm with 70%–90% coatings).