Vacuum Conditions and the Lifetime of a Single-Charged Helium Ion Beam in the Booster Synchrotron of the NICA (First Run)

JETP Letters - The results of the first run (December 2020) for the commissioning of the new superconducting synchrotron Booster at the Joint Institute for Nuclear Research are presented. Vacuum...     

Temperature dynamics of triglycine sulfate domain structure according to atomic force microscopy and dielectric spectroscopy data

A hydrogen-containing ferroelectric triglycine sulfate (TGS) was comprehensively studied with an atomic force microscopy (AFM) and dielectric spectroscopy. The domain structure dynamics was in situ investigated with piezoresponse force microscopy (PFM) during heating and cooling the TGS crystal near phase transition. Relaxation dependencies of domain boundaries general perimeter and domain dimensions were obtained. TGS dielectric spectra measured at the frequency range from 10 to 10¹¹ Hz were analyzed on basis of significant contribution of conductivity into the dielectric response of ferroelectrics and a good agreement with the experimental data was received. It allows us to obtain more information about temperature dynamics of the domain structure.     

Electron loss of heavy many-electron ions in relativistic collisions with neutral atoms

Electron-loss processes arising in collisions of heavy many-electron ions (like U²⁸⁺) with neutral atoms (H, N, Ar) are considered over a wide energy range including relativistic energies. Various computer codes (LOSS, LOSS-R, HERION, and RICODE), created for calculation of the electron-loss cross sections, and their capability are described. Recommended data on the electron-loss cross sections of U²⁸⁺ ions colliding with H, N, Ar targets and predicted lifetimes of U²⁸⁺ ion beams in accelerator are given. Calculated electronloss cross sections are compared with available experimental data and other calculations.     

Characterization of single-crystal sapphire substrates by X-ray methods and atomic force microscopy

The possibility of characterizing a number of practically important parameters of sapphire substrates by X-ray methods is substantiated. These parameters include wafer bending, traces of an incompletely removed damaged layer that formed as a result of mechanical treatment (scratches and marks), surface roughness, damaged layer thickness, and the specific features of the substrate real structure. The features of the real structure of single-crystal sapphire substrates were investigated by nondestructive methods of double-crystal X-ray diffraction and plane-wave X-ray topography. The surface relief of the substrates was investigated by atomic force microscopy and X-ray scattering. The use of supplementing analytical methods yields the most complete information about the structural inhomogeneities and state of crystal surface, which is extremely important for optimizing the technology of substrate preparation for epitaxy.     

Structure of the polar (010) cleavage of a ferroelectric TGS crystal from the atomic-force microscopy data

The atomically smooth polar (010) cleavage of a ferroelectric triglycine sulfate (TGS) crystal has been studied by the method of atomic-force microscopy. It is shown that the rounded 0.6-nm-high (deep) protrusions and pits with nanometer lateral dimensions revealed on the surfaces of TGS crystals are characteristic of their microrelief. These microrelief details can be formed either as a result of crystal cleavage in the ferroelectric phase or the mechanical action of a cantilever onto the crystal surface. These two-dimensional formations are relatively stable and genetically related to the layer structure of the ferroelectric phase of TGS crystals.     

Criterion for identification of ferroelectric domains in TGS crystals from AFM images

Criteria for identification of actual (dynamic) domains and morphologically similar domain “memory” regions are proposed based on the study of various types of contrast of topographic atomic-force microscopy images of lenslike regions on the polar surface of TGS crystals. Inaccuracy in identification may result in further errors in estimating the parameters of the domain structure. The images of ferroelectric domains in the spreading-resistance mode that indicate directly the presence of conductive properties of the domain walls have been obtained for the first time.     

Formation of Langmuir-Blodgett films in solutions of comblike polymers

The structures have been analyzed of the monolayers of comblike precursor polymers of polyimides and mixed cellulose esters formed at the water/air interface and of the Langmuir-Blodgett films obtained by transfer of these condensed monolayers onto solid substrates. The important factors that ensure the structure control and supramolecular organization of these monolayers and films are established.     

Structural localization of trace amounts of impurity ions in Langmuir-Blodgett films by the X-ray standing wave method

The molecular organization of Langmuir-Blodgett films based on the liquid crystal europium complex has been studied by the X-ray standing-wave method at the synchrotron radiation source BESSY (Germany). Analysis of the experimental data obtained made it possible to determine the composition of the organic multilayer nanosystems and localize the position of metal ions incorporated in organic layers from the aqueous subphase during film deposition. It is shown that, despite the low content of metal ions in the aqueous subphase (no higher than 10^?7 mol/l), their incorporation into the Langmuir layer affects the molecular film organization significantly.     

Particular artifacts of topographic images of dielectrics in atomic-force microscopy

Particular artifacts of atomic-force microscopy (AFM) images of dielectrics, which are related to the presence of a static charge on the surface, are described. Artificial climate control with the use of a TRACKPORE ROOM-02 climatic box during measurements makes it possible to remove the static charge, owing to which the quality of AFM images and reliability of measured metric surface characteristics increase. Comparative analysis of the surface roughness measured under conventional conditions of microscope operation (static charge is present on a dielectric surface) and under the conditions of controlled artificial climate (static charge is completely removed) is performed. It is established that, in the presence of a static charge on the surface, roughness measurements may yield both overestimated and underestimated values; the largest increase in error is observed in measurements of micro-and nanosized surface areas.