Desorption isotherms and mathematical modeling of thin layer drying kinetics of tomato

In recent years, there is an increased demand on the international market of dried fruits and vegetables with significant added value. Due to its important production, consumption and nutrient intake, drying of tomato has become a subject of extended and varied research works. The present work is focused on the drying behavior of thin-layer tomato and its mathematical modeling in order to optimize the drying processes. The moisture desorption isotherms of raw tomato were determined at four temperature levels namely 45, 50, 60 and 65 °C using the static gravimetric method. The experimental data obtained were modeled by five equations and the (GAB) model was found to be the best-describing these isotherms. The drying kinetics were experimentally investigated at 45, 55 and 65 °C and performed at air velocities of 0.5 and 2 m/s. In order to investigate the effect of the exchange surface on drying time, samples were dried into two different shapes: tomato halves and tomato quarters. The impact of various drying parameters was also studied (temperature, air velocity and air humidity). The drying curves showed only the preheating period and the falling drying rate period. In this study, attention was paid to the modeling of experimental thin-layer drying kinetics. The experimental results were fitted with four different models.     

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.     

Terahertz quantum well infrared detectors

We report on recent measurements on GaAs/AlGaAs THz quantum well infrared photodetectors (QWIPs), investigating linewidth broadening as function of doping level. Structures with 3% and 2% Al content in the barrier were grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Linewidth widening with increasing doping of the GaAs quantum well could be observed in the detection spectra. The observed shift of peak detection wavelength for different well dopings fits with values obtained from wavefunction calculations, taking into account many-particle effects, namely exchange and correlation energies and the effect of depolarization on the absorption. In addition, activation energies extracted from dark current measurements as function of device temperature are also in agreement with the calculations.     

Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

The chemical composition of the AlGaN/GaN surface during typical process steps in transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps studied included organic solvent cleaning, 1:1 HCl:H₂O dip, buffered oxide etch dip, oxygen plasma descum and rapid thermal annealing (RTA). The surface composition was calculated after correction for the interference of the Ga Auger lines in the N 1s portion of the spectra. The buffered oxide etched (BOE) surface showed a greater tendency for Al (compared to Ga) to be oxidized in the surface, under a layer of adventitious carbon. Three different treatments were found to yield a combination of low C and O levels in the surface. Both plasma cleaning and RTA were highly effective at reducing the carbon contamination of the surface, but did increase the oxygen levels. The RTA treated surface was found to have low levels of oxygen incorporation to a depth of 2-6 nm.