Terahertz quantum well infrared detectors |
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| Authors: | Marcel Graf Emmanuel Dupont Hui Luo Soufien Haffouz Zbig R Wasilewski Anthony J Spring Thorpe Dayan Ban HC Liu |
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| Institution: | 1. Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;2. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;3. A E Group, Samsung Advanced Institute of Technology, Giheung-Gu, Yongin-Si, GyeingGi-Do 449-712, Republic of Korea |
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| Abstract: | We report on recent measurements on GaAs/AlGaAs THz quantum well infrared photodetectors (QWIPs), investigating linewidth broadening as function of doping level. Structures with 3% and 2% Al content in the barrier were grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Linewidth widening with increasing doping of the GaAs quantum well could be observed in the detection spectra. The observed shift of peak detection wavelength for different well dopings fits with values obtained from wavefunction calculations, taking into account many-particle effects, namely exchange and correlation energies and the effect of depolarization on the absorption. In addition, activation energies extracted from dark current measurements as function of device temperature are also in agreement with the calculations. |
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