Dynamic mechanical relaxation and thermal creep of high-entropy La30Ce30Ni10Al20Co10 bulk metallic glass

Spatial frequency shift(SFS) microscopy with evanescent wave illumination shows intriguing advantages, including large field of view(FOV), high speed, and good modularity. However, a missing band in the spatial frequency domain hampers the SFS superresolution microscopy from achieving resolution better than 3 folds of the Abbe diffraction limit. Here, we propose a novel tunable large-SFS microscopy, making the resolution improvement of a linear system no longer restricted by the detection numerical aperture(NA). The complete wide-range detection in the spatial frequency domain is realized by tuning the illumination spatial frequency actively and broadly through an angle modulation between the azimuthal propagating directions of two evanescent waves. The vertical spatial frequency is tuned via a sectional saturation effect, and the reconstructed depth information can be added to the lateral superresolution mask for 3D imaging. A lateral resolution of λ/9, and a vertical localization precision of ~λ/200(detection objective NA = 0.9) are realized with a gallium phosphide(GaP) waveguide. Its unlimited resolution enhancing capability is demonstrated by introducing a designed metamaterial chip with an unusual large refractive index. Besides the great resolution enhancement, this method shows better anti-noise capability than classical structured illumination microscopy without SFS tunability. This method is chip-compatible and can potentially provide a massproducible illumination chip module achieving the fast, large-FOV, and deep-subwavelength 3D nanoscopy.     

钙离子对表面活性剂单层膜聚集结构的影响

采用分子动力学模拟研究了气液界面上钙离子对阴离子表面活性剂十二烷基苯磺酸钠单层膜聚集结构的影响.结果表明,单层膜结构与表面覆盖度及Ca2＋离子存在与否均有关系.Ca2＋离子能够压缩表面活性剂极性头使聚集结构排列更加紧密,均力势体现了Ca2＋离子与极性头之间的结合能力强弱,二者之间的相互作用与稳定的溶剂分离极小值有关,而Ca2＋离子需要克服一个溶剂能障才能与之发生相互作用,并引起极性头周围水分子结构的重排.模拟表明,分子动力学方法可以在分子水平上研究无机盐离子对表面活性剂单层膜水化结构的影响,解释无机盐离子在界面膜中的动力学行为.     

Simulation on dielectric susceptibility and domain evolution of relaxor ferroelectrics

Dielectric susceptibility and domain evolution of the relaxor ferroelectrics have been simulated using the Monte Carlo method upon the Potts-Ising model. The grain size effect and the applied ac field frequency effect on the dielectric susceptibility were theoretically investigated. We found that the dielectric susceptibility increases and the T_m (the temperature at which the dielectric susceptibility reaches the maximum) shifts to lower temperature with increasing average grain size or decreasing frequency. In addition, we obtained the value of the relaxation parameter γ estimated from the linear fit of the modified Curie-Weiss law; its changing trend with increasing average grain size or increasing frequency was well consistent with the experimental observation. From the results of the domain pattern evolution process, we observed the differences between relaxor ferroelectrics and normal ferroelectrics subjected to an applied ac field.