Visualization of plasma source ion implantation for arrays of multiple targets

Visualization of sheath overlap dynamics during plasma source ion implantation (PSII) of a multiple-target array is used to illustrate the effect of target spacing on dose uniformity over the surface of a single target. The simulations are conducted using a hybrid plasma model, and the images are created using the Tecplot package by Amtec. The simulations suggest scaling rules for sheath overlap time as a function of target spacing.     

Accurate models of collisions in glow discharge simulations

Very detailed, self-consistent kinetic glow discharge simulations are used to examine the effect of various models of collisional processes. The effects of allowing anisotropy in elastic electron collisions with neutral atoms instead of using the momentum transfer cross-section, the effects of using an isotropic distribution in inelastic electron-atom collisions, and the effects of including a Coulomb electron-electron collision operator are all described. It is shown that changes in any of the collisional models, especially the second and third described above, can make a profound difference in the simulation results. This confirms that many discharge simulations have great sensitivity to the physical and numerical approximations used. Our results reinforce the importance of using a kinetic theory approach with highly realistic models of various collisional processes     

Convective scheme solution of the Boltzmann transport equation for nanoscale semiconductor devices

A model for the simulation of the electron energy distribution in nanoscale metal–oxide–semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzmann transport equation, a nonlinear integrodifferential equation, for the distribution of electrons in a MOSFET device. The method is used to find probabilities for use in an iterative scheme which iterates to find collision rates in cells. The CS is also a novel approach to 2D semiconductor device simulation. The CS has been extended to handle boundary conditions in 2D as well as to calculation of polygon overlap for polygons of more than three sides. Electron energy distributions in the channel of a MOSFET are presented.     

用蒙特卡罗方法计算光通过薄层随机分布粒子的散射

本文利用蒙特卡罗方法计算准直光束通过薄层随机分布粒子散射的透射和反射光强,并和输运理论的扩散近似结果做了比较。当散射接近各向同性时两者符合良好。当散射明显地成为各向异性时,蒙特卡罗方法的结果是合理的,而输运理论的扩散近似失效。     

The structure of the breakdown front

An analytic treatment of the breakdown front is given, using a simplified set of fluid equations, and assuming the existence of a steady-state reference frame. Key quantities are derived, such as the densities at the peak and far from the peak, and the scale lengths for the main variables close to the front. These results should permit testing of computational models, which should employ a more accurate set of fluid equations, and may be useful in deriving macroscopic models which do not resolve the length scales identified.