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We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions due to the increased contribution of the high-energy A1 longitudinal optical phonon–plasmon coupled mode. In addition, the E2(high) [E2(low)] phonon energy shifts downward (upward) more significantly in the laterally overgrown regions than in the coherently grown regions. The doping-induced Raman shifts of the E2(high) and E2(low) phonons in the laterally overgrown regions are approximately ?0.6 and 0.11 cm?1, respectively, corresponding to the in-plane stress of ~0.22 GPa. 相似文献
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