A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector |
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Authors: | Xuan-Zhang Li Ling Sun Jin-Lei Lu Jie Liu Chen Yue Li-Li Xie Wen-Xin Wang Hong Chen Hai-Qiang Jia Lu Wang |
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Institution: | Key Laboratory for Renewable Energy;University of Chinese Academy of Sciences;Detector Technology Laboratory;Songshan Lake Materials Laboratory |
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Abstract: | We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified In As Sb quantum well, Ga Sb is replaced with Al Sb/Al Ga Sb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K. |
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Keywords: | photodetector energy band calculation InAsSb/AlSb/AlGaSb quantum well interband transition |
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