Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures

Fe-doped amorphous carbon films of about lOOnm in thickness are deposited on n-type silicon substrates by pulsed laser deposition （PLD）, and positive magnetoresistance （MR） is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40-120 K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the maguetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.