Si／SiO2多层膜的I-V特性研究

用射频磁控溅射法制备了Si／SiO2多层膜,并对多层膜的FV特性实验结果进行了拟合．分析表明,Si／SiO2多层膜的I-V特性由多种因素决定。单一的电流输运模型不能控制Si／SiO2多层膜的I-V特性,多层膜结构及氧化硅层的厚度是影响薄膜I-V特性的主要因素．     

Si/SiO2多层膜的Ⅰ-Ⅴ特性研究

用射频磁控溅射法制备了Si/SiO2多层膜,并对多层膜的Ⅰ-Ⅴ特性实验结果进行了拟合.分析表明,Si/SiO2多层膜的Ⅰ-Ⅴ特性由多种因素决定,单一的电流输运模型不能控制Si/SiO2多层膜的Ⅰ-Ⅴ特性,多层膜结构及氧化硅层的厚度是影响薄膜Ⅰ-Ⅴ特性的主要因素.     

薄膜结构对Si／SiO2 I-V特性的影响

用射频磁控溅射法制备了3种结构的Si／SiO2纳米薄膜，测定了薄膜的I-V特性．实验结果分析表明，薄膜结构是影响其FV特性的主要因素．     

A comparative study of electroluminescence from Ge／SiO2 and Si／SiO2 films

Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed.     

薄膜结构对Si/SiO2 Ⅰ-Ⅴ特性的影响

用射频磁控溅射法制备了3种结构的Si/SiO2纳米薄膜,测定了薄膜的I-V特性. 实验结果分析表明,薄膜结构是影响其I-V特性的主要因素.