Effect of magnetic field on the terahertz radiationdetection in high electron mobility transistors

In this paper, we make a theoretical investigation of the plasma-wave instability mechanism in a two-dimensional electron fluid in a high electron mobility transistor (HEMT) driven by the terahertz radiation in the presence of a perpendicular magnetic field. It is found that the resonant peaks of the gate-to-source/drain admittances and detection responsivity depend on the strength of the external magnetic field. Such phenomena can be used to produce a desired effect by adjusting the intensity of the magnetic field.     

Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors

This paper theoretically studies the high-electron-mobility transistor （HEMT） driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation.