Effect of magnetic field on the terahertz radiationdetection in high electron mobility transistors |
| |
| Authors: | Ma Ming-Rui Chen Yu-Ling and Wang Chang |
| |
| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences and Graduate School of Chinese Academy of Sciences, Shanghai 200050, China |
| |
| Abstract: | In this paper, we make a theoretical investigation of the
plasma-wave instability mechanism in a two-dimensional electron
fluid in a high electron mobility transistor (HEMT) driven by the
terahertz radiation in the presence of a perpendicular magnetic
field. It is found that the resonant peaks of the
gate-to-source/drain admittances and detection responsivity depend
on the strength of the external magnetic field. Such phenomena can
be used to produce a desired effect by adjusting the intensity of
the magnetic field. |
| |
| Keywords: | terahertz radiation magnetic
field HEMT |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
