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王德重  陆兴华  黄湖  李师群 《物理学报》1999,48(7):1192-1197
提出一旋转对称磁光阱,这一势阱束缚的玻色-爱因斯坦凝聚是环形的.分别对无相互作用和强排斥作用两种极端情况的基态波函数做了计算.分析了凝聚形成的转变温度. 关键词:  相似文献   
2.
考虑舞动和微风振动的复合横担疲劳评估   总被引:1,自引:0,他引:1  
复合横担在实际运营环境长期荷载作用下的疲劳性能是影响其向不同电压等级输电线路大范围推广应用的关键因素,准确的预测和评估复合横担在典型运营荷载下的疲劳寿命是确保其在服役期内安全、可靠运行的重要保障.本文以目前国内最具推广应用前景的双柱斜拉式复合横担为研究对象,对输电线路发生导线舞动、微风振动时横担的受力情况进行分析,借助有限元软件ANSYS,进行了复合横担的静动力特性分析,得到了横担上危险点的应力时程曲线,最后结合材料的S-N曲线利用Miner线性累积损伤理论评估了复合横担的疲劳寿命.结果表明,复合横担在不同舞动工况下的失效破坏模式以及疲劳寿命完全不同;当输电线路中存在一个半波的舞动时,由于舞动幅值过大,复合横担一般发生静力失效破坏;在不考虑任何防震系统的前提下,当发生偶数个半波舞动时,耐张塔复合横担的使用寿命在5.1年以上,其在微风振动情况下的平均使用寿命可达30年.  相似文献   
3.
A W-shaped magneto-optical potential trap with axial symmetry is proposed.The Bose-Einstein condensate confined in the trap is ring-shaped.The ground state wave functions for two extreme cases,the noninteraction and strong repulsive limits,are calculated.The critical temperature is analyzed.  相似文献   
4.
Jian-Mei Li 《中国物理 B》2022,31(11):116801-116801
We investigated the photon emission spectra on Ag (111) surface excited by tunneling electrons using a low temperature scanning tunneling microscope in ultrahigh vacuum. Characteristic plasmon modes were illustrated as a function of the bias voltage. The one electron excitation process was revealed by the linear relationship between the luminescence intensity and the tunneling current. Luminescence enhancement is observed in the tunneling regime for the relatively high bias voltages, as well as at the field emission resonance with bias voltage increased up to 9 V. Presence of a silver (Ag) nanoparticle in the tunneling junction results in an abnormally strong photon emission at the high field emission resonances, which is explained by the further enhancement due to coupling between the localized surface plasmon and the vacuum. The results are of potential value for applications where ultimate enhancement of photon emission is desired.  相似文献   
5.
Patterning SiC substrates with focused ion beam for growth of confined graphene nanostructures is interesting for fabrication of graphene devices. However, by imposing an ion beam, the morphology of illuminated SiC substrate surface is inevitably damaged, which imposes significant effects on the subsequent growth of graphene. By using confocal Raman spectroscopy, we investigate the effects of ion beam illumination on the quality of graphene layers that are grown on 6H-SiC (0001) substrates with two different growth methods. With the first method, the 6H-SiC (0001) substrate is flash annealed in ultra-high vacuum. Prominent defects in graphene grown on illuminated areas are revealed by the emergence of Raman D peak. Significant changes in D peak intensity are observed with Ga+ ion fluence as low as 10^5 μm^-2. To eliminate the damage from the ion beam illumination, hydrogen etching is employed in the second growth method, with which prominent improvement in the quality of crystalline graphene is revealed by its Raman features. The defect density is significantly reduced as inferred from the disappearance of D peak. The Raman shift of G peak and 2D peak indicates strain-released graphene layers as grown in such a method. Such results provide essential information for patterning graphene nano-devices.  相似文献   
6.
The key to fully understanding water-solid interfaces relies on the microscopic nature of hydrogen bond networks,including their atomic structures, interfacial interactions, and dynamic behaviors. Here, we report the observation of two types of simplest water chains on Au(111) surface which is expected unstable according to the rules of hydrogen network on noble metal surfaces. A common feature at the end of chain structures is revealed in high resolution scanning tunneling microscopy images. To explain the stability in observed hydrogen bond networks,we propose a structure model of the water chains terminated with a hydroxyl group. The model is consistent with detailed image analysis and molecular manipulation. The observation of simplest water chains suggests a new platform for exploring fundamental physics in hydrogen bond networks on surfaces.  相似文献   
7.
Pressure-dependent properties in layered transition-dichalcogenides are important for our understanding of their basic structures and applications. We investigate the electronic structure in MoSe_2 monolayer under external pressure up to 5.73 GPa by Raman spectroscopy and photoluminescence(PL) spectroscopy. The double resonance out-of-plane acoustic mode(2ZA) phonon is observed in Raman spectroscopy near 250 cm~(-1), which presents pronounced intensity and pressure dependence. Significant variation in 2ZA peak intensity under different pressures reflects the change in electronic band structure as pressure varies, which is consistent with the blue shift in PL spectroscopy. The high sensitivity in both Raman and PL spectroscopy under moderate pressure in such a two-dimensional material may have many advantages for optoelectronic applications.  相似文献   
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