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以La施主掺杂SrTiO_3(La STO)单晶为样品,制备了Pt/LaSTO/In结构存储器件.通过一系列电学测试,发现该器件具有稳定的多级阻变现象,最大开关比为10~4;高低阻电流-电压关系曲线的拟合分析表明,高阻时存在界面势垒,而低阻时满足电子隧穿模型特性.电子顺磁共振研究表明LaSTO单晶内存在带正电的空穴缺陷中心.综合分析证明器件的高低阻之间的转变由界面空位缺陷导致的电子俘获与去俘获引起.此外发现光照会对LaSTO单晶的阻值产生影响.该实验结果为LaSTO单晶在阻变存储器件中的应用提供了理论和技术指导. 相似文献
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构建论证式教学模式及流程,着力搭建联系物理概念课教学与培养学生科学论证能力之间的“桥梁”,文章从营造论证氛围、显化论证语言、丰富论证资料、提升论证能力4个维度阐述在物理概念课上进行论证式教学的策略. 相似文献
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The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching(RS) cells.Here we report the RS properties of Au/Ni O/Sr Ti O3(STO)/Pt memory cells.The switching repeatability is closely related to the applied bias polarity,which is different from the scenario of the Au/STO/Pt cells reported in our previous researches.The high resistance in positive bias is greater than that in negative bias.The R(T)–R0 I2 R(T) plot of the on-state I–V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias,respectively.These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode.The spatial RS location is identified with the weaker part along the conductance filament length direction,which should be near the Ni O/STO interface and STO/Pt interface under positive and negative bias,respectively. 相似文献
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