基于倏逝波界面散射的单个纳米颗粒无标记成像

介绍了一种利用倏逝波界面散射对单个纳米颗粒进行无标记成像的方法。分别使用全内反射(TIR)倏逝波与表面等离激元(SPPs)两种倏逝波与单个纳米颗粒相互作用,激发纳米颗粒极化并发生散射,所产生的界面散射与入射倏逝波发生干涉,形成了纳米颗粒极化场与抛物线形干涉条纹的特征成像。分别对直径为500,200,100nm的聚苯乙烯颗粒进行了单个纳米颗粒无标记成像。比较了两种倏逝波界面散射对单个纳米颗粒成像结果,发现表面等离激元界面散射成像中的单个纳米颗粒极化强度约是全内反射极化强度的10倍,并且接近于暗场成像。因此,表面等离激元界面散射对单个纳米颗粒无标记成像具有更高灵敏度。所提单个纳米颗粒无标记成像方法可以拓展到病毒检测、生物单分子成像等领域。     

Asymmetric diffusion model for oblique-incidence reflectometry

A diffusion theory model induced by a line source distribution is presented for oblique-incidence reflectometry.By fitting to this asymmetric diffusion model,the absorption and reduced scattering coefficients μa and μ’s of the turbid medium can both be determined with accuracy of 10% from the absolute profile of the diffuse reflectance in the incident plane at the negative position-1.5 transport mean free path(mfp’) away from the incident point;particularly,μs’ can be estimated from the data at positive positions within 0-1.0 mfp’ with 10% accuracy.The method is verified by Monte Carlo simulations and experimentally tested on a phantom.     

Determination of the In-Plane Optical Conductivity of Multilayer Graphene Supported on a Transparent Substrate of Finite Thickness from Normal-Incidence Transmission Spectra

Normal-incidence transmission measurements are commonly used for determining the real part of the in-plane optical conductivities σ1 （ω） of graphene layers. We present an accurate expression for σ1 （ω） in a closed form for a multilayer graphene film supported on a finite-thickness transparent substrate. This form takes into account the coherent and incoherent multiple reflections of the system, whereas the traditional method assumes a semi-infinite substrate. The simulated results for graphene sheets with a layer number N ≤ 10 show that no matter what the transparent substrate is, the accuracy to which σ1 （ω） is determined by applying this expression is improved with no systematic error. Moreover, the layer number N can be exactly determined by simply dividing the σ1 （ω） value of N-layer graphene by the corresponding σ1 （ω） of monolayer graphene, where ωp is the peak frequency of the ordinary dielectric function＇s imaginary part ε1 （ω）of graphene.     

利用多个标准样品校准光谱椭圆偏振仪

光谱椭偏仪是常用的测量薄膜厚度及材料光学性质的仪器,其准确性主要由系统的校准过程确定。提出一种新的利用标准样品校准光谱椭偏仪的方法。该方法通过对多个已知厚度和已知材料特性的薄膜样品进行测量,利用测量得到的多个样品的傅里叶系数光谱与包含未知校准参数的理论光谱之间进行对比,通过最小二乘法拟合,回归求解出整个系统的未知校准参数,包括偏振器方位角,波片延迟,波片方位角和系统入射角等。将该方法的应用领域扩展到200~1000nm的宽光谱区域,并通过测量3~13nm的SiO2/Si薄膜样品,实验验证了该方法的有效性,准确性达到0.194nm。该方法相对于传统校准方法更加简单、快速。