Theoretical study of potential energy curves,spectroscopic constants,and radiative lifetimes of low-lying states in SeO molecule

The low-lying potential energy curves of SeO molecule are computed by means of ab initio multireference configuration interaction technique, taking into account relativistic (scalar plus spin-orbit coupling) effects. The spectroscopic constants of Ω states for X³Σ^-, a¹Δ, b¹Σ⁺, A³Π, A'³Δ, and A"³Σ⁺ states are obtained, and they are in good accordance with available experimental values. The Franck-Condon factors and transition dipole moments to the ground state are computed, and the natural radiative lifetimes of low-lying Ω states are theoretically obtained. Comparisons of the natural lifetimes of Ω states with previous experimental results and those of isovalent TeO molecule are made.     

基于C#的湿度传感器校准平台设计

针对大量湿度传感器出厂或使用前需要定标或进行误差补偿的技术需求,本文基于C#语言和SQL数据库技术,构建了一种采用传感器融合算法的大批量湿度传感器数据自校准平台。首先通过饱和盐溶液构建标准湿度环境,然后通过MT4080D数字电桥对待校准湿度传感器进行多次测量,之后把测量值矩阵和标准值导入基于最小二乘和加权融合算法的平台进行处理,得到不同固定点湿度环境下传感器标定和补偿的校准数据。该设计实现了操作简单,成本低廉,响应时间短,运算速度快的湿度传感器的软件校准算法平台,具有一定实际应用价值。     

GeO分子激发态的电子结构和跃迁性质的组态相互作用方法研究

应用多参考组态相互作用方法计算了GeO分子的第一解离极限(Ge(³P_g)+O(³P_g))对应的18个Λ-S电子态的电子结构. 计算中纳入了Ge原子的3d轨道电子的内壳层-价壳层电子关联效应、标量相对论效应和Davidson修正. 基于计算的电子态的电子结构, 通过求解径向Schrödinger方程获得了束缚电子态的光谱常数R_e, T_e, ω_e, ω_eχ_e, B_e, 理论计算给出的这些电子态的光谱常数与之前的实验结果符合得很好. 计算了电子态的电偶极矩随核间距的变化, 分析了电子态的组态成分的变化对电偶极矩的影响. 计算的势能曲线表明, 激发态A¹Π, 1¹Σ^-, D¹Δ, a³Π, a’³Σ⁺, d³Δ 和 e³Σ^-的绝热激发能密集地分布于26000-37000 cm^-1范围内, 这些密集分布的电子态之间的相互作用对振动波函数有明显扰动作用. 借助于激发态之间的自旋-轨道耦合矩阵元, 阐明了邻近的激发态对A¹Π和a³Π的扰动作用. 基于计算的A¹Π-X¹Σ⁺和A’¹Σ⁺-X¹Σ⁺跃迁的电偶极跃迁矩和Franck-Condon 因子, 给出了A¹Π 和A’¹Σ⁺态的最低的六个振动能级的辐射寿命.     

联合重叠压缩感知法消除水声通信系统限幅噪声

针对正交频分复用(Orthogonal Frequency Division Multiplexing,OFDM)水声通信系统的高峰值平均功率比(Peakto-Average Ratio,PAPR)问题,在发射端采用了压扩变换法和限幅法联合的方法降低PAPR。由于限幅法会产生带内干扰和带外噪声,降低通信系统的误码性能,因此利用限幅噪声的稀疏性,在接收端采用压缩感知(Compressed Sensing,CS)法对限幅噪声进行估计和恢复。限幅噪声的估计受信道估计准确性的影响,为提高限幅噪声估计的准确度,提出了重叠压缩感知算法,在恢复限幅噪声的过程中利用了压缩感知信道估计法估计所得的信道信息和发射数据对限幅噪声进行估计,有效降低了限幅法对系统误码性能的影响。仿真和水池实验验证了该算法的有效性。      

An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector

With the aid of photolithography, an array of one-dimensional porous silicon photonic crystai reflector islands for a far infrared image detector ranging from 10 μm to 14 μm is successfully fabricated. Silicon nitride formed by low pressure chemical vapor deposition （LPCVD） was used as the masking layer for the island array formation. After etching, the microstructures were examined by a scanning electron microscope and the optical properties were studied by Fourier transform infrared spectroscopy, the result indicates that the multilayer structure could be obtained in the perpendicular direction via periodically alternative etching current in each pre-pattern. At the same time, the island array has a well-proportioned lateral etching effect, which is very useful for the thermal isolation in lateral orientation of the application in devices. It is concluded that regardless of the absorption of the deposition layer on the substrate, the localized photonic crystalline islands have higher reflectivity. The designed islands structure not only prevents the cracking of the porous silicon layers but is also useful for the application in the cold part for the sensor devices and the iliterconnection of each pixel.