混合型超导限流器与重合闸配合研究北大核心CSCD

基于超导限流器是最理想故障电流限流装置,当超导限流器串入电力系统后对电力系统继电保护和重合闸产生影响.本文在分析新型混合型超导限流器限流原理的基础上,为了解决失超型超导限流器的超导体失超恢复时间与重合闸时间无法配合的问题,引入失超检测系统,延长重合闸时间,当检测到超导线圈失超恢复后重合闸才动作,仿真结果表明该方法可行,并可解决失超型超导限流器与重合闸配合问题.     

不同气氛下LaMnO_3缓冲层后退火效应研究北大核心CSCD

在第二代高温涂层导体离子束辅助沉积技术(IBAD)路线中,LaMnO_3(LMO)作为超导层的生长面,直接影响到YBCO的性能,为改善LMO的织构、形貌等,对磁控溅射法制备的LMO薄膜进行了后退火处理,本实验系统研究了后退火处理对LMO物相、织构、表面形貌等的影响,并进一步研究了后退火效应对超导层的影响.结果表明后退火处理有助于改善LMO表面形貌,优化LMO微结构,在潮湿Ar-5%H2气氛下,LMO缓冲层改善率最高,在经湿Ar-5%H2后退火处理的LMO缓冲层上制备的超导层具有最佳的性能,在77K自场下,临界电流密度达到1.2 MA/cm^2.     

Ultrafast Terahertz Probes of Charge Transfer and Recombination Pathway of CH_3NH_3PbI_3 Perovskites

We use transient terahertz photoconductivity measurements to demonstrate that upon optical excitation of CH_3NH_3PbI_3 perovskite, the hole transfer from CH_3NH_3PbI_3 into the organic hole-transporting material(HTM)Spiro-OMe TAD occurs on a sub-picosecond timescale. Second-order recombination is the dominant decay pathway at higher photo-excitation fluences as observed in neat CH_3NH_3PbI_3 films. In contrast, under similar experimental conditions, second-order recombination weakly contributes the relatively slow recombination between the electrons in the perovskite and the injected holes in HTM, as a loss mechanism at the CH_3NH_3PbI_3/Spiro-OMe TAD interface. Our results offer insights into the intrinsic photophysics of CH_3NH_3PbI_3-based perovskites with direct implications for photovoltaic devices and optoelectronic applications.