红外非线性光学晶体材料AgGaGeS4激光实验参数的模拟计算

在小信号近似下,对红外非线性光学晶体AgGaGeS4的非线性性质进行研究.模拟计算了钛宝石0.8 μm,Nd:YAG 1.064 μm泵浦下,Ⅰ类AgGaGeS4-OPO在XZ调谐面上的相位匹配情况,晶体波长调谐范围可达0.90～11.4 μm,调谐角19.7～59.3°,有效非线性系数随匹配角增大而逐渐降低.另外也计算了晶体激光倍频波波长和相位匹配角的关系,晶体调谐角度范围0～62°,波长1.5～10.6 μm,同时对倍频允许角及非临界准相位匹配(NCPM)下的情况也进行了探讨.所得结果可预测其非线性性质,并对探索AgGaGeS4晶体用于特定波长激光器,设计新波段提供了理论依据.     

Consistency proof of two denoising methods and the parameter selection of PDE filtering method for ESPI

Electronic speckle pattern interferometry （ESPI） is a nondestructive, whole-field optical measurement technique. The removal of speckle noise is fundamental to extract measurement information accurately. In this letter, two filtering methods based on the oriented feature of ESPI fringes, i.e., the second-order oriented partial differential equation （SOOPDE） and oriented, regularized quadratic-cost function filtering methods, are first proven to be consistent. An important question in solving partial differential equation, i.e., how to select suitable parameters in an adaptive manner, is then discussed. The computer-simulated and experimentally obtained ESPI fringe patterns and phase map are processed by the SOOPDE filtering model with adaptive selective parameters. The qualitative and quantitative analyses demonstrate that the parameters selected by the adaptive method are effective and suitable for the SOOPDE filtering model.     

AgGaGeS_4晶体介电性能的初步探讨

利用本实验室生长的红外非线性晶体材料AgGaGeS_4(AGGS),常温下进行腐蚀实验并观察畴结构,测试了不同频率、电压下晶体的电滞回线以及同一电压下不同频率介质的电容值.腐蚀图像显示出畴结构,畴尺寸5～10 μm左右,证实AGGS为一热释电晶体.然而,室温下的电滞回线变形为一近似椭圆,介质电容与电场频率关系表现出强色散特性.本文对这一现象进行了系统分析,最后提出了进一步探索AGGS铁电性质的具体建议.     

Laser-Induced Electron Fresnel Diffraction in Tunneling and Over-Barrier Ionization

Photoelectron momentum distribution in strong-field ionization has a variety of structures that reveal the complicated dynamics of this process. Recently, we identified a low-energy interference structure in the case of a super-intense extreme ultraviolet(XUV) laser pulse and attributed it to the laser-induced electron Fresnel diffraction. This structure is determined by the laser-induced electron displacement [Geng et al. Phys. Rev. A104(2021) L021102]. In the present work, we find that the Fre...     

红外非线性晶体ZnGeP2的生长及品质研究

采用高温元素反应法直接合成ZnGeP2多晶料,用竖式Bridgman法生长出ZnGeP2单晶,晶体棒毛坯尺寸达φ15×70mm3.对多晶料和单晶体进行了X射线粉末衍射(XRD)、低倍率红外显微镜、红外分光光度计检测;对晶体切片进行退火处理,使得在2μm吸收系数降到α＝0.10cm-1;加工出一块5×6×6.5mm3的晶体倍频元件,在一台射频激励CO2激光器上实现了从9.24μm到4.26μm的倍频.     

Ba2SbGaS5: Solid-state Synthesis, Crystal and Electronic Structures, and Property Characterization

Single crystal of Ba2SbGaS5 has been synthesized by the high temperature solidstate reaction method. The compound crystallizes in the orthorhombic space group Pnma with a = 12.177(4), b = 8.880(3), c = 8.982(3), V = 971.4(6)3 , Z = 4, Dc = 4.284 g/cm3 , = 14.487 mm-1 , F(000) = 1096, the final R = 0.0171 and wR = 0.0384 for all data. The structure comprises an infinite one-dimensional 1∞SbGaS54- anionic chain constructed from the GaS4 tetrahedra and the SbS5 polyhedra via sharing edge alternately. The paralleled 1∞SbGaS54- anionic chains engage with each other and form the two-dimensional Sb-Ga-S layer perpendicular to a-axis with the isolated Ba2+ cations arranged between layers. The IR spectrum and the UV-Vis spectrum have been investigated. Also, the first-principles band structure and density of states calculations indicate that the compound belongs to indirect semiconductor with the band gap of 2.1 eV, which is supported by the UV-Vis diffuse reflectance results.     

双能X射线光栅相衬成像的研究

X射线光栅相衬成像存在系统复杂、成像效率低、步进精度要求高、光栅加工难度大等问题.本文设计了一种双能阵列X射线源和双能分析光栅,并应用于X射线光栅相衬成像,提出了一种双能X射线光栅相衬成像系统,阐述了该成像系统的成像原理和相位信息提取方法.提出的成像系统不需要精密步进平台,精简了成像系统,避免了步进误差导致的成像质量降低问题;两次曝光就可以成像,提高了成像效率;双能阵列X射线源、双能分析光栅的应用避免了源光栅、分析光栅难以加工的问题.对提出的成像系统及其相位提取方法进行了仿真,仿真结果显示成像系统可以正常成像,提取到的检测样本的X射线相衬成像相位一阶导数分布与相关文献实验所得结果一致.     

Synthesis,Crystal and Electronic Structure of Ba_3ZnSb_2O_9 with the 6H-perovskite-type Structure

Crystals of Ba3ZnSb2O9 have been grown by a high-temperature solid-state reaction and characterized by single-crystal X-ray diffraction.Ba3ZnSb2O9 crystallizes in the hexagonal P63/mmc space group with a = 5.8663(4),c = 14.478(2) ,V = 431.49(8) 3,Z = 2 and R(all data) = 0.0167.The structure of Ba3ZnSb2O9 consists of pairs of face-sharing Sb2O9 bi-octahedra connected via corners with two single layers of mutually isolated ZnO6 octahedra.Each Ba2+ ion is bonded to 12 oxygen atoms.The UV-vis absorption spectrum of the compound has been investigated.Additionally,the calculations of band structure and density of states have also been performed with density functional theory method.The obtained results tend to support the experimental data of the absorption spectrum.     

新型红外晶体硫锗镓银的多晶合成

本文直接使用高纯Ag,Ga,Ge,S单质作为原料合成AgGaGeS4多晶.为防止S蒸气高压使多晶合成管炸裂,采用双温区气相输运的合成方法.对合成的多晶作粉末衍射(XRD)分析,衍射图谱与标准JC-PDF卡片上峰值位置一致,表明样品为高纯单相AgGaGeS4多晶.使用该多晶原料成功生长出了优质单晶,并对合成工艺中存在的关键问题进行了讨论.