Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation

Two-dimensional (2D) moiré materials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties. Although great progress has been achieved, the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics. Here, we demonstrated an atomic force microscope (AFM) tip manipulation method to control the interlayer twist angle of epitaxial MoS₂/graphene heterostructure with an ultra-high accuracy better than 0.1°. Furthermore, conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moiré pattern wavelength, phonons and excitons. Our work provides a technique to precisely control the twist angle of 2D moiré materials, enabling the possibility to establish the phase diagrams of moiré physics with twist angle.     

Observation of quadratic magnetoresistance in twisted double bilayer graphene

Magnetoresistance ({MR}) provides rich information about Fermi surface, carrier scatterings, and exotic phases for a given electronic system. Here, we report a study of the magnetoresistance for the metallic states in twisted double bilayer graphene (TDBG). We observe quadratic magnetoresistance in both Moiré valence band (VB) and Moiré conduction band (CB). The scaling analysis shows validity of Kohler's rule in the Moiré valence band. On the other hand, the quadratic magnetoresistance appears near the halo structure in the Moiré conduction band, and it violates Kohler's rule, demonstrating the {MR} scaling related to band structure in TDBG. We also propose an alternative scaling near the halo structure. Further analysis implies that the observed quadratic magnetoresistance and alternative scaling in conduction band are related to the halo boundary. Our results may inspire investigation on {MR} in twisted 2D materials and provide new knowledge for {MR} study in condensed matter physics.     

铁硒基超导研究新进展:高质量(Li,Fe)OHFeSe单晶薄膜

单晶薄膜形态的高温超导材料对于相关基础科学研究和应用开发都极为重要.多带的铁基高温超导体往往呈现丰富的物理现象,并具有较高的超导临界参数.特别是近年发现的插层（Li,Fe）OHFeSe超导体,无论对高温超导机理还是应用研究而言,都日益受到重视,已成为铁基家族中重要的典型材料.但是,该化合物含有OH键,加热易分解.因此,现有的常规高温成膜技术均不适用于生长该薄膜材料.为解决这一生长难题,我们最近发明了基体辅助水热外延生长法,实现了超导薄膜制备技术上的突破.本文简要介绍用此软化学成膜技术首次成功制备出（Li,Fe）OHFeSe单晶薄膜.该薄膜材料具有优良的结晶质量和较高的超导临界参数,特别是其高的临界电流密度和上临界场对应用开发有实际价值.因此,（Li,Fe）OHFeSe超导单晶薄膜的成功合成,为机理研究和应用开发分别提供了重要的实验载体和备选材料.另外,该薄膜技术也有望应用于其他功能材料的探索与合成,尤其是对常规手段难以获取的材料更具重大价值.