GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu

GaN-based thin film vertical structure light-emitting diodes （VS-LEDs） were fabricated by a modified YAG laser lift-off （LLO） process and transferred to Cu substrates. With a comparison of the electrical and optical properties of conventional LEDs on sapphire substrates and of lateral structure thin film LEDs by a KrF LLO process, the vertical structure of LLO LEDs shows obvious superiority. LLO VSLEDs made by modified YAG LLO process show less increase of leakage current than the devices made by conventional/（rE LLO process. Furthermore, owing to the well current spreading and less current path, the ideality factors and series resistance of vertical structure LEDs reduce greatly and the efficiency increases more obviously than the lateral structure LEDs, which is dso reflected on the relative L - I curves. The output power of vertical structure LEDs is over 3 times greater than that of the lateral structure LLO LEDs within 300mA.     

基于少模长周期光纤叠栅的模式转换器

本文提出一种在同一段少模光纤上写入两个不同周期Λ1和Λ2的长周期光纤光栅构成叠栅的方法,实现了纤芯基模LP_(01)向高阶纤芯模LP_(11)模式转换的宽带宽的新型的全光纤模式转换器.利用有限元法和耦合模理论建立了模式转换器的理论分析模型.数值仿真分析了叠栅中两个子光栅周期间隔、光栅长度、耦合系数等光栅参数对模式转换器的影响.仿真分析和实验结果表明,通过改变两个子光栅的周期间隔来改变两个损耗峰的位置,形成一个损耗峰,从而可以实现宽带宽的模式转换器,其10dB带宽约是单栅的2倍.与传统的模式转换器相比,该转换器带宽宽、转换效率高,尺寸小、抗干扰能力强,可以在模分复用系统和光通信中得到广泛的应用.