Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

SiO_x(x=1.3)薄膜的优化阻变特性与退火温度的关系探究

采用电子束蒸发技术在Si衬底上制备了亚氧化硅SiOx(x=1.3)薄膜,研究了不同温度热退火处理的SiOx薄膜作为阻变层的ITO/SiOx/Si/Al结构的阻变特性.研究发现,在电极尺寸相同的条件下,随着退火温度的增加,该结构的高低阻态比显著提高,最高可达109.X射线光电子能谱和电子顺磁共振能谱的分析表明,不同退火温度下形成的不同价态的硅悬挂键是低阻态下细丝通道的主要来源.椭偏仪的测试结果表明,经过热退火处理的SiOx薄膜折射率的增大是导致高阻态下器件电阻增大的原因.     

单光束光镊实验与理论分析

给出了一种实现稳定捕获微小粒子及其显微成像的单光束光镊实验系统,基于此系统研究了单个二氧化硅微球的动态捕获过程.实验中发现要稳定捕获粒子的同时还能够实时观察粒子的运动变化,必须保证物镜的聚焦平面与CCD的成像平面重合.其次,聚焦物镜的数值孔径与激光功率的大小,对实现粒子的稳定捕获具有重要的影响.实验结果与理论分析表明物镜的数值孔径越大、激光功率越大,粒子的捕获力越大,可实现微粒的稳定捕获.此研究有望在大学物理教学及生物的微操控领域具有一定的参考价值.