Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors(HEMTs) on silicon(111) substrates grown by metal organic chemical vapor deposition(MOCVD) with a novel partially Magnesium(Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.     

基于改进功率谱熵的抑郁症脑电信号活跃性研究

采用非线性动力学方法研究脑精神疾病是近年来国内外学者研究的热点和趋势.针对脑精神疾病的研究和诊断中缺少客观有效的量化参数和量化指标的状况,提出了一种根据对时间序列功率谱划分而定义的谱熵,然后用其计算和分析脑电信号谱熵的方法.通过数据仿真试验证明该谱熵和信号活跃性之间存在正相关关系.基于这种相关性,应用该方法对抑郁症患者和正常对照组的脑电信号功率谱熵进行了数值计算,然后进行了分析对比和统计检验.实验结果表明:抑郁症患者脑电信号的功率谱熵在部分脑区显著弱于正常健康人.证明该谱熵能够表征大脑电生理活动状况,提供反映其活动性强弱的信息,可以作为度量大脑电生理活动性的一个参数.这对于能否将该功率谱熵作为诊断脑精神疾病的物理参数具有积极意义.     

Low-leakage-current AIGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.     

边值问题的齐次化方法引出的一个积分问题

讨论一类边值问题在齐次化过程中引出的一个反常积分问题．首先将原问题转化为一个三角函数有理积分,考虑到积分上限在快变量变化过程中出现瑕点。分段考虑积分求解问题．     

Multi-bubble motion behavior of uniform magnetic field based on phase field model

Aiming at the interaction and coalescence of bubbles in gas–liquid two-phase flow, a multi-field coupling model was established to simulate deformation and dynamics of multi-bubble in gas–liquid two-phase flow by coupling magnetic field, phase field, continuity equation, and momentum equation. Using the phase field method to capture the interface of two phases, the geometric deformation and dynamics of a pair of coaxial vertical rising bubbles under the applied uniform magnetic field in the vertical direction were investigated. The correctness of results is verified by mass conservation method and the comparison of the existing results. The results show that the applied uniform magnetic field can effectively shorten the distance between the leading bubble and the trailing bubble, the time of bubbles coalescence, and increase the velocity of bubbles coalescence. Within a certain range, as the intensity of the applied uniform magnetic field increases, the velocity of bubbles coalescence is proportional to the intensity of the magnetic field, and the time of bubbles coalescence is inversely proportional to the intensity of the magnetic field.     

非线性Lipschitz算子的一个特征不变量及其应用

本文通过推广有界线性算子对偶到非线性Lipschitz算子的方法,将谱半径的概念推广到非线性情形,从而得到一个有关非线性Lipschitz算子的特征数．作为应用,本文在一定条件下证明:非线性离散系统的收敛性可由算子T在各点处的．Jacobi矩阵谱半径确定,从而部分地证明LaSalle提出的一个公开性猜想．