Giant Goos–Hnchen shifts of waveguide coupled long-range surface plasmon resonance mode

A hybrid structure based on a planar waveguide(PWG) mode coupling a long-range surface plasmon resonance(LRSPR) mode is proposed to enhance the GH shift. Both the PWG mode and LRSPR mode can be in strong resonance, and these two modes can be coupled together due to the normal-mode splitting. The largest GH shift of PWG-coupled LRSPR structure is 4156 times that of the incident beam, which is 23 times and 3.6 times that of the surface plasmon resonance(SPR) structure and the LRSPR structure, respectively. As a GH shift sensor, the highest sensitivity of 4.68 × 10~7λ is realized in the coupled structure. Compared with the sensitivity of the traditional SPR structure, the sensitivity of our structure is increased by more than 2 orders, which theoretically indicates that the proposed configuration can be applied to the field of high-sensitivity sensors in the future.     

多核环境下内存数据库并发调度技术优化研究

对多核环境下内存数据进行并发调度,可以减少计算机宕机次数和数据切换时时间,提高数据并发调度精度,增加数据操作平稳性。当前的内存数据并发调度方法是利用PrebuiltTrigger对内存数据进行并发调度,在调度过程中,没有设定具体的内存数据调度目标,导致内存数据库中的数据因此错乱无序,存在数据并发调度精度低的问题。为此,提出一种基于Linux的多核环境下内存数据并发调度优化方法。该方法首先采用IACT算法对影响调度进行的数据和内存数据库中相似或重复数据进行清洗,然后以清洗的数据为基础,利用启发式算法对其进行数据特征选取,依据多属性决策理论对内存数据并发调度的最优路径属性权重集合进行计算,以其结果为依据,计算调度最优路径的偏差值,最后利用最小偏差值,建立调度最优路径线性规划模型,对每条调度路径的综合决策属性值进行排序,由此得到调度的最优路径,完成对多核环境下内存数据的并发调度。实验结果证明,所提方法可以对多核环境下内存数据进行高效率地并发调度,提高了数据调度精度,增加了内存数据的可循环利用性,为低开销的内存数据调度提供了支撑。     

Enhancement and control of the Goos-H?nchen shift by nonlinear surface plasmon resonance in graphene

The Goos-H?nchen(GH) shift of graphene in the terahertz frequency range is investigated, and an extremely high GH shift is obtained owing to the excitation of surface plasmon resonance in graphene in the modified Otto configuration.It is shown that the GH shift can be positive or negative, and can be enhanced by introducing a nonlinearity in the substrate.Large and bistable GH shifts are demonstrated to be due to the hysteretic behavior of the reflectance phase. The bistable GH shift can be manipulated by changing the thickness of the air gap and the Fermi level or relaxation time of graphene.