第一性原理研究单层Ge2X4S2(X=P,As)的热电性能

单层Ge₂X₄S₂(X=P, As)是最近预测的一种二维层状材料,它们不仅拥有高的光吸收系数,同时还有较高的载流子迁移率,这意味着它们在光电和热电领域可能有较好的应用前景.本文通过第一性原理和玻尔兹曼输运理论系统地研究了这两种材料的热电性质.结果表明,单层Ge₂P₄S₂和Ge₂As₄S₂在室温下展现较低的晶格热导率,沿armchair方向分别为3.93 W·m^-1·K^-1和3.19 W·m^-1·K^-1, zigzag方向分别为4.38 W·m^-1·K^-1和3.79 W·m^-1·K^-1,这主要是由低的声子群速度、大的格林艾森参数以及小的声子弛豫时间造成的.基于HSE06泛函计算出的能带结构表明单层Ge₂     

Enhanced thermoelectric properties in two-dimensional monolayer Si2BN by adsorbing halogen atoms

Using the first principles calculation and Boltzmann transport theory, we study the thermoelectric properties of Si2BNadsorbing halogen atoms (Si2BN-4X, X = F, Cl, Br, and I). The results show that the adsorption of halogen atoms cansignificantly regulate the energy band structure and lattice thermal conductivity of Si2BN. Among them, Si2BN-4I has thebest thermoelectric performance, the figure of merit can reach 0.50 K at 300 K, which is about 16 times greater than that ofSi2BN. This is because the adsorption of iodine atoms not only significantly increases the Seebeck coefficient due to banddegeneracy, but also rapidly reduces the phonon thermal conductivity by enhancing phonon scattering. Our work proves theapplication potential of Si2BN-based crystals in the field of thermoelectricity and the effective method for metal crystals toopen bandgaps by adsorbing halogens.