微处理器80C86及其外围芯片协合效应实验研究

研究了总剂量辐照对微处理器 80C86及其外围芯片82C85单粒子效应敏感度的影响.252Cf轰击 80C86获得的单粒子效应截面在0-12 0Gy(Si)剂量范围内没有明显的变化 ;外围芯片 82C85中发生的单粒子脉冲可能引起系统故障. Total dose dependence of the single event effct (SEE) sensitivity for microprocessor 80C86 and its peripheral chip 82C85 are reported. In this study, 1 μCi 252 Cf was used as a heavy ion simulator and the samples were tested by a patent 8086 test system following exposure to 60 Co γ rays. It is found that SEE cross section of 80C86 does not show significant change with increasing total dose from 0-120 Gy(Si). SEE test also shows that single event transient (SET) in 82C85...