| 微处理器80C86及其外围芯片协合效应实验研究 |
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| 引用本文： | 张庆祥,杨兆铭.微处理器80C86及其外围芯片协合效应实验研究[J].原子核物理评论,2002,19(1):70-72. |
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| 作者姓名： | 张庆祥 杨兆铭 |
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| 作者单位： | 兰州物理研究所真空低温技术与物理国家实验室,甘肃,兰州,730000 |
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| 摘 要： | 研究了总剂量辐照对微处理器 80C86及其外围芯片82C85单粒子效应敏感度的影响.252Cf轰击 80C86获得的单粒子效应截面在0-12 0Gy(Si)剂量范围内没有明显的变化 ;外围芯片 82C85中发生的单粒子脉冲可能引起系统故障. Total dose dependence of the single event effct (SEE) sensitivity for microprocessor 80C86 and its peripheral chip 82C85 are reported. In this study, 1 μCi 252 Cf was used as a heavy ion simulator and the samples were tested by a patent 8086 test system following exposure to 60 Co γ rays. It is found that SEE cross section of 80C86 does not show significant change with increasing total dose from 0-120 Gy(Si). SEE test also shows that single event transient (SET) in 82C85...
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| 关 键 词： | 单粒子效应 总剂量效应 微处理器 外围芯片 |
| 文章编号： | 1007-4627(2001)01-0070-03 |
| 收稿时间： | 1900-01-01 |
| 修稿时间： | 2001年3月27日 |
Total Dose Dependence of SEE Sensitivities for Microprocessor 80C86 and Its Peripheral Chip 82C85 |
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| ZHANG Qing-xiang,YANG Zhao-ming.Total Dose Dependence of SEE Sensitivities for Microprocessor 80C86 and Its Peripheral Chip 82C85[J].Nuclear Physics Review,2002,19(1):70-72. |
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| Authors: | ZHANG Qing-xiang YANG Zhao-ming |
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| Abstract: | Total dose dependence of the single event effct (SEE) sensitivity for microprocessor 80C86 and its peripheral chip 82C85 are reported. In this study, 1 μCi 252 Cf was used as a heavy ion simulator and the samples were tested by a patent 8086 test system following exposure to 60 Co γ rays. It is found that SEE cross section of 80C86 does not show significant change with increasing total dose from 0-120 Gy(Si). SEE test also shows that single event transient (SET) in 82C85... |
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