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Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga_(0.75)In_(0.25)As_(0.49)Sb_(0.51) nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation,these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm(0.636 e V). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region(980 nm) with the external quantum efficiency of 2.0 × 10~4% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing. 相似文献
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