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对超深亚微米PMOS器件的负栅压温度不稳定性(NBTI)退化机理进行了研究.主要集中在对器件施加NBT和随后的PBT应力后器件阈值电压的漂移上.实验证明反型沟道中空穴在栅氧中的俘获以及氢分子在栅氧中的扩散是引起NBTI退化的主要原因.当应力条件变为PBT时,陷落的空穴可以快速退陷,但只有部分氢分子可以扩散回栅氧与衬底界面钝化硅悬挂键,这就导致了PBT条件下阈值电压只能部分恢复.
关键词:
超深亚微米PMOS器件
负偏压温度不稳定性
界面陷阱
氢气 相似文献
2.
The NBTI degradation phenomenon and the role of hydrogen during NBT stress
are presented in this paper. It is found that PBT stress can recover a
fraction of Vth shift induced by NBTI. However, this recovery is
unstable. The original degradation reappears soon after reapplication of the NBT
stress condition. Hydrogen-related species play a key role during a device's NBT
degradation. Experimental results show that the diffusion species are
neutral, they repassivate Si dangling bond which is independent of the gate
voltage polarity. In addition to the diffusion towards gate oxide, hydrogen
diffusion to Si-substrate must be taken into account for it also has
important influence on device degradation during NBT stress. 相似文献
3.
Degradation characteristics of PMOSFETs under negative bias
temperature--positive bias temperature--negative bias temperature
(NBT--PBT--NBT) stress conditions are investigated in this paper. It
is found that for all device parameters, the threshold voltage has
the largest shift under the first NBT stress condition. When the
polarity of gate voltage is changed to positive, the shift of device
parameters can be greatly recovered. However, this recovery is
unstable. The more severe degradation appears soon after
reapplication of NBT stress condition. The second NBT stress causes
in linear drain current to degrade greatly, which is different from
that of the first NBT stress. This more severe parameter shift
results from the wear out of silicon substrate and oxide interface
during the first NBT and PBT stress due to carrier
trapping/detrapping and hydrogen related species diffusion. 相似文献
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