Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress |
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| Authors: | Liu Hong-Xi Li Zhong-He and Hao Yue |
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| Affiliation: | Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | Degradation characteristics of PMOSFETs under negative bias
temperature--positive bias temperature--negative bias temperature
(NBT--PBT--NBT) stress conditions are investigated in this paper. It
is found that for all device parameters, the threshold voltage has
the largest shift under the first NBT stress condition. When the
polarity of gate voltage is changed to positive, the shift of device
parameters can be greatly recovered. However, this recovery is
unstable. The more severe degradation appears soon after
reapplication of NBT stress condition. The second NBT stress causes
in linear drain current to degrade greatly, which is different from
that of the first NBT stress. This more severe parameter shift
results from the wear out of silicon substrate and oxide interface
during the first NBT and PBT stress due to carrier
trapping/detrapping and hydrogen related species diffusion. |
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| Keywords: | ultra deep submicron PMOSFETs negative bias temperature instability (NBTI) positive bias
temperature instability (PBTI) interface traps |
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