GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长

本文利用金属有机物化学气相沉积(MOCVD)方法系统地研究了p-AlGaN层掺杂机理及优化设计生长. 明确了生长温度、压力及TMAl的流量对AlGaN层Al组分的影响关系,并给出了各自不同的机理与作用. 研究发现,Al组分介于10%—30%之间能够很好地将电子限定在量子阱区域并保持高的材料晶体质量. 发展了一种新的生长技术来克服p-AlGaN层掺入效率低下和空穴注入不足的问题. 优化条件下生长的p型AlGaN电子阻挡层很大地提升了InGaN/GaN基LED的输出光功率. 关键词： 氮化镓基 LED Al组分 电子阻挡层     

Stackable luminescent device integrating blue light emitting diode with red organic light emitting diode

We present a novel stackable luminescent device integrating a blue light emitting diode(LED)with a red organic LED(OLED)in series.The anode of the OLED is connected with the cathode of the LED through a via in the insulation layer on the LED.The LED–OLED hybrid device is electroluminescent and two electroluminescence(EL)peaks(the blue peak around 454 nm and the red peak around 610 nm)are observed clearly.The effect of the indium tin oxide(ITO)layer on the device performance is analyzed.Compared with the individual LED and OLED,their combination shows great potential applications in the field of white lighting,plant lighting,and display.