Orientation effects on the bandgap and dispersion behavior of 0.91Pb（Zn_（1/3）Nb_（2/3））O_3-0.09PbTiO_3 single crystals

0.91Pb(Zn_1/3Nb_2/3)O₃--0.09PbTiO₃ (PZN--9%PT) single crystals with different orientations are investigated by using a spectroscopic ellipsometer, and the refractive indices and the extinction coefficients are obtained. The Sellmeier dispersion equations for the refractive indices are obtained by the least square fitting, which can be used to calculate the refractive indices in a low absorption wavelength range. Average Sellmeier oscillator parameters E_o, $\lambda$_o, S_o, and E_d are calculated by fitting with the single-term oscillator equation, which are related directly to the electronic energy band structure. The optical energy bandgaps are obtained from the absorption coefficient spectra. Our results show that the optical properties of [001] and [111] poled crystals are very similar, but quite different from those of the [011] poled crystal.     

Orientation effects on the bandgap and dispersion behavior of 0.91Pb(Zn_1/3Nb_2/3)O₃-0.09PbTiO₃ single crystals

0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO 3(PZN-9%PT) single crystals with different orientations are investigated by using a spectroscopic ellipsometer,and the refractive indices and the extinction coefficients are obtained.The Sellmeier dispersion equations for the refractive indices are obtained by the least square fitting,which can be used to calculate the refractive indices in a low absorption wavelength range.Average Sellmeier oscillator parameters E o,λ o,S o,and E d are calculated by fitting with the single-term oscillator equation,which are related directly to the electronic energy band structure.The optical energy bandgaps are obtained from the absorption coefficient spectra.Our results show that the optical properties of [001] and [111] poled crystals are very similar,but quite different from those of the [011] poled crystal.     

二硫化钼薄膜的刻蚀方法及其应用

过渡金属硫化物因能带结构与层数具有明显的依赖关系而受到广泛关注,尤其是二维二硫化钼（MoS₂）薄膜因其优良的光电性能而成为研究热点。目前,化学气相沉积法（CVD）和剥离法已成为制备MoS₂薄膜的主要方法,但这两种方法均存在难以精确控制MoS₂层数的问题,研究证实通过刻蚀手段能够对MoS₂薄膜层数进行进一步加工,从而得到单层或特定层数的样品。本文综述了基于不同刻蚀原理的MoS₂薄膜刻蚀技术的国内外研究进展,分析讨论了不同刻蚀技术对刻蚀后MoS₂薄膜质量的影响,介绍了MoS₂刻蚀方法在场效应晶体管（FET）以及其他光电器件领域的实际应用和发展前景,最后对将来研究中需要着力解决的问题进行了展望。