表面包覆改性对纳米CeO2分散性的影响

了改善纳米CeO2在Zn-Al类共晶合金中的分散性,采用超声液相包覆法对纳米CeO2进行表面活性剂表面包覆改性,并用AES测定了包覆层的厚度,用TEM研究了CeO2的团聚状况,用TGA分析了有机物包覆层的炭化温度范围,最后用FE-SEM观察了CeO2在复合材料中的分散情况。结果表明,包覆在纳米CeO2表面的厚度约为20 nm的表面活性剂层提高了微粒的分散性,而且该包覆层在495℃时已经炭化。热力学计算的结果也表明,炭化层能与氧化膜反应,该反应提高了CeO2与基体间的润湿性,并使其均匀分布在基体合金中。     

Thermally activated magnetization reversal in magnetic tunnel junctions

In this paper, the magnetization reversal of the ferromagnetic layers in the IrMn/CoFe/AlO_x/CoFe magnetic tunnel junction has been investigated using bulk magnetometry. The films exhibit very complex magnetization processes and reversal mechanism. Thermal activation phenomena such as the training effect, the asymmetry of reversal, the loop broadening and the decrease of exchange field while holding the film at negative saturation have been observed on the hysteresis loops of the pinned ferromagnetic layer while not on those of the free ferromagnetic layer. The thermal activation phenomena observed can be explained by the model of two energy barrier distributions with different time constants.     

Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates.It investigates the thermal relaxations of both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field.The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers.Exchange bias field is also found to be smaller upon irradiation at higher ion dose.This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.     

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. [2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the investigated temperature range.     

微波固相合成氧化锌纳米棒

通过前驱体的微波固相热分解法快速合成了氧化锌纳米棒, 其直径在60～385 nm之间, 长可达数微米. 前驱体则通过一步室温固相反应制备. 用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能量色散X射线分析(EDX)和透射电子显微镜(TEM)对产物的结构和形貌进行了表征. 同时, 对氧化锌纳米棒的光致发光(PL)性能作了测试, 结果表明在355 nm处有一个明显的近带隙发射峰. 另外, 对比实验表明, 微波辐射在氧化锌纳米棒的形成过程中起了关键性作用, 并对其形成机理进行了初步探讨.     

ZnS纳米粒子的固相合成及其光学性能

将不同的添加剂引入到低温固相反应中，快速合成了不同尺寸的ZnS纳米粒子。利用TEM表征了产物形貌，利用XRD研究了不同的添加剂、同一添加剂下不同的反应温度、不同反应时间对纳米粒子尺寸的影响。结果表明，不同的添加剂对粒子的尺寸影响较大，其中，十二烷基胺以其特殊的反应方式在较高温度下获得了较小的纳米粒子。另外，在PEG400存在条件下，反应温度和反应时间对粒子尺寸均有一定的影响。同时，对不同条件下所得产物的紫外-可见光吸收性能也进行了测试。     

Influence of Ga+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

Ga+ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance(MR) are investigated.The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose.The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×10 13 ions/cm 2 and the step disappears afterwards.Two peaks in the R-H curve are found to be asymmetric.     

二硫化钼薄膜的刻蚀方法及其应用

过渡金属硫化物因能带结构与层数具有明显的依赖关系而受到广泛关注,尤其是二维二硫化钼（MoS₂）薄膜因其优良的光电性能而成为研究热点。目前,化学气相沉积法（CVD）和剥离法已成为制备MoS₂薄膜的主要方法,但这两种方法均存在难以精确控制MoS₂层数的问题,研究证实通过刻蚀手段能够对MoS₂薄膜层数进行进一步加工,从而得到单层或特定层数的样品。本文综述了基于不同刻蚀原理的MoS₂薄膜刻蚀技术的国内外研究进展,分析讨论了不同刻蚀技术对刻蚀后MoS₂薄膜质量的影响,介绍了MoS₂刻蚀方法在场效应晶体管（FET）以及其他光电器件领域的实际应用和发展前景,最后对将来研究中需要着力解决的问题进行了展望。     

运用光声压电技术测定固体热扩散率

根据简化的热弹理论模型,运用光声压电技术测定团体材料的热扩散率。在优化的实验条件下,实现了对Al_2O_3短纤维增强铝合金基SAE321的复合材料Al_2O_3x/SAE321热扩散率的测量。结果表明,该方法简单快捷,不但能准确地测量均匀固体的热扩散率,而且能有效检测微观不均匀材料的等效热扩散率。     

利用胶体碳球为模板制备SiO2、TiO2、SnO2空心球

介观尺度的氧化物空心球材料在许多领域都有着潜在的应用价值[1],因此近年来受到人们的广泛关注。其制备方法包括:模板法[2],声化学法[3],水热法[4]等。其中胶体粒子模板合成是制备氧化物空心球材料的一条最为有效的途径。常见的胶体粒子有金、银、CdS的纳米粒子,介观尺度的SiO