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ICP-AES法测定硅酸盐岩石中15个元素 总被引:1,自引:1,他引:0
本法采用ICP-AES法并应用阶梯减光器,分步稀释和分步曝光相结合的方法,分析岩石中一些高含量的造岩元素,同时也分析岩石中次要、痕量元素。方法使用自制的3.5kW的高频等离子体发生器,采用三种混合酸(HNO_3、HF、HClO_4)分解样品,一次冲稀,两次摄谱。在2400 A—3800 A波段,测定Cr、Mn、V、Be、Cu、Y、La、Ni等8个元素;在3600A—5000A波段,采用三阶梯减光器,测定Ti、 相似文献
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With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. 相似文献
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混凝土内部在断裂时会产生相应的声发射信号,通过这一信号,混凝土内部损伤断裂区域可以被定位。然而,混凝土是一种多相非均匀材料,而声发射定位算法是基于均匀介质假设进行计算的,因此采用该算法对其定位会产生一定的误差,有必要从细观的角度研究混凝土非均匀性对定位精度的影响。本文基于随机骨料模型以及时差定位算法(基于遗传算法),建立了一种用于估计混凝土声发射定位误差的定量估算模型。本文采用该模型定量估算分析了混凝土细观组分对其声速的影响,并在该分析结构的基础上继续分析了骨料含量以及声速取值偏差对定位精度的影响。 相似文献
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Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application 下载免费PDF全文
Hai-Qing Xie 《中国物理 B》2021,30(11):117102-117102
We preform a first-principles study of performance of 5 nm double-gated (DG) Schottky-barrier field effect transistors (SBFETs) based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS2 contacts. Because of the wide bandgap of SiC, the corresponding DG SBFETs can weaken the short channel effect. The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors. Moreover, the bilayer metallic 1T-phase MoS2 contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees. The above results are helpful and instructive for design of short channel transistors in the future. 相似文献
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