Pseudo-Rhombus-Shaped Subwavelength Crossed Gratings of GaAs for Broadband Antireflection

Holographic lithography coupled with the nonlinear response of photoresist to the exposure is adopted to fabricate porous photoresist （PR） mask. Conventional dot PR mask is also generated, and both patterns are transferred into a underlying GaAs substrate by the optimal dry etching process to obtain tapered subwavelength crossed gratings （SWCGs） to mimic the moth-eye structure. In comparison of the experiment and simulation, the closely-packed pseudo-rhombus-shaped GaAs SWCGs resulting from the porous mask outperforms the conical counterpart which comes from the dot mask, and achieves a reported lowest mean spectral reflectance of 1.1%.     

可延展柔性无机微纳电子器件原理与研究进展

为适应下一代电子产品便携性、形状可变性、人体适用性等方面的进一步需求,近年来基于无机电子材料的可延展柔性电子技术成为全球电子产业界与学术界关注的新焦点.与有机柔性电子学器件不同,可延展柔性无机电子器件指的是建立在柔性基底上的无机电子组件.这种具有柔性的集成电路利用力学设计提供大变形,在保持无机脆性电子器件高性能和高可靠性的同时,具备形状可弯曲、可伸缩等柔性性能.本文综述了近年来无机柔性电子器件的进展,包括力学设计原理、基于界面黏附的转印集成方法以及柔性大变形下的失效机理等,并展望了未来的应用和发展.