DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (I_on), on/off current ratio (I_on/I_off), subthreshold swing (SS) transconductance (g_m), cut-off frequency (f_T) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high I_on (9.98×10 ^{- 4} A/μm), high I_on/I_off (～ 10¹¹), as well as low SS (～ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.     

含R_2NCS_2配体的Mo(W)-Cu-S簇合物的~1H NMR研究

报道了十一个含R_2NCS_2配体的Mo(W)-Cu-S簇合物的,~1H NMR研究结果,表明异金属簇合物导致配体中α-H的NMR谱线严重加宽.对谱线的位移,化合物的结构及配位键键长L_(Cu-s)之间的关系也作了讨论.