DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate |
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| Institution: | 1.College of Electronics and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China;2.GTA Semiconductor Corporation Limited, Shanghai 200123, China;3.Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200041, China |
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| Abstract: | A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (Ion), on/off current ratio (Ion/Ioff), subthreshold swing (SS) transconductance (gm), cut-off frequency (fT) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high Ion (9.98×10 - 4 A/μm), high Ion/Ioff (～ 1011), as well as low SS (～ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices. |
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| Keywords: | tunnel field effect transistor double gate pocket |
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