无序碳单层的电子结构及氢原子吸附的第一性原理

本研究运用第一性原理计算方法,系统地研究了无序碳单层材料不同位点的电子结构及其析氢性能.计算结果显示无序结构中的C-C键相比于石墨烯中的C-C键在26.7%的范围内有不同程度的拉伸或压缩,使得C原子电荷在-0.17～+0.16个电子范围内变化,导致部分C原子电子局域化.电子的局域化增强了C原子的化学活性,从而表现出了较强的吸附性能.我们发现H原子与C原子的键合及析氢性能与C原子间的键角相关.对于三配位的碳原子,其中三个价电子通过sp~2杂化轨道与最邻近的碳原子结合形成较强的共价键,而余下的一个p_z轨道电子可以与H原子在垂直于原子层的方向形成较弱的化学键.无序结构可以打破三个sp~2杂化轨道的对称性,进而影响p_z轨道与氢的成键.本研究在一定程度上揭示了单层无序碳材料结构-性能的构效关系,为实验上设计特定性能的无序碳功能材料提供理论指导.     

Interfacial defect engineering and photocatalysis properties of hBN/MX2 (M = Mo,W, and X = S,Se heterostructures

Van der Waals (VDW) heterostructures have attracted significant research interest due to their tunable interfacial properties and potential applications in many areas such as electronics, optoelectronic, and heterocatalysis. In this work, the influences of interfacial defects on the electronic structures and photocatalytic properties of hBN/MX₂ (M = Mo, W, and X=S, Se) are studied using density functional theory calculations. The results reveal that the band alignment of hBN/MX₂ can be adjusted by introducing vacancies and atomic doping. The type-I band alignment of the host structure is maintained in the heterostructure with n-type doping in the hBN sublayer. Interestingly, the band alignment changed into the type-II heterostructrue due to V_B defect and p-type doping is introduced into the hBN sublayer. This can conduce to the separation of photo-generated electron-hole pairs at the interfaces, which is highly desired for heterostructure photocatalysis. In addition, two Z-type heterostructures including hBN(Be_B)/MoS₂, hBN(Be_B)/MoSe₂, and hBN(V_N)/MoSe₂ are achieved, showing the decreasing of band gap and ideal redox potential for water splitting. Our results reveal the possibility of engineering the interfacial and photocatalysis properties of hBN/MX₂ heterostructures via interfacial defects.