| 应变补偿层对量子点生长影响的理论研究 |
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| 引用本文： | 冯昊,俞重远,刘玉敏,芦鹏飞,贾博雍,姚文杰,田宏达,赵伟,徐子欢.应变补偿层对量子点生长影响的理论研究[J].物理学报,2010,59(2):765-770. |
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| 作者姓名： | 冯昊 俞重远 刘玉敏 芦鹏飞 贾博雍 姚文杰 田宏达 赵伟 徐子欢 |
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| 作者单位： | 北京邮电大学信息光子学与光通信研究院，信息光子学与光通信教育部重点实验室，北京 100876 |
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| 基金项目： | 国家高技术研究发展计划（批准号：2009AA03Z405）和国家自然科学基金（批准号：60644004）资助的课题. |
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| 摘 要： | 量子点的光学特性与量子点的大小均匀性、密度、内部应变以及隔离层的厚度等有密切关系.文中从理论角度定量研究了GaNXAs1-X应变补偿层对InAs/GaAs量子点生长质量的改善作用,分析了应变补偿层对隔离层厚度减小的作用.讨论了应变补偿层的补偿位置和补偿层N组分X对量子点生长时局部应变和体系应变的补偿作用.分析了应变补偿层对体系应变的减少作用,并计算了相邻层量子点的垂直对准概率.研究结果对实验中应变补偿的优化和高质量量子点阵列的生长实现提供了理论依据.
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| 关 键 词： | 应变补偿 量子点 |
| 收稿时间： | 2009-04-16 |
| 修稿时间： | 6/1/2009 12:00:00 AM |
Theoretical study on strain compensation layer for growth of quantum dots |
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| Feng Hao,Yu Zhong-Yuan,Liu Yu-Min,Lu Peng-Fei,Jia Bo-Yong,Yao Wen-Jie,Tian Hong-Da,Zhao Wei,Xu Zi-Huan.Theoretical study on strain compensation layer for growth of quantum dots[J].Acta Physica Sinica,2010,59(2):765-770. |
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| Authors: | Feng Hao Yu Zhong-Yuan Liu Yu-Min Lu Peng-Fei Jia Bo-Yong Yao Wen-Jie Tian Hong-Da Zhao Wei Xu Zi-Huan |
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| Abstract: | The optical properties of quantum dots have a close relationship with the size fluctuation,density,strain filed distribution of the dots and the spacer layer thickness. InAs/GaAs quantum dot with GaNXAs 1-X strain compensation layers (SCL) is theoretically investigated for improving the crystal quality. The reduction effects of the spacer thickness are discussed quantitatively. The influence of the location and the N concentration of the GaNXAs 1-X SCL on compensation of the strain formed on quantum dots (Q... |
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| Keywords: | strain compensation quantum dot |
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