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以回摆法衍射峰的积分强度为基础,提出了X射线衍射分析单晶体时的多重性因子和衍射几何因子的概念,推导出普遍适用的相含量计算公式.利用双晶X射线多功能四圆衍射仪测绘GaN/GaAs(001)外延层中立方相(002)面、{111}面和六角相{100}面的极图和倒易空间Mapping,分析了六角相和立方相微孪晶的各晶面在极图中的分布特征及计算相含量时的多重性因子和衍射几何因子,并根据立方相(002)、立方相微孪晶{111}、六角相{101}和{100}衍射峰的积分强度,求得外延层中立方相微孪晶和六角相的含量. 相似文献
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In this study, we investigate the effects of GaN cap layer thickness on the two-dimensional electron gas (2DEG) electron density and 2DEG electron mobility of AlN/GaN heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the GaN cap layer thickness of an AlN/GaN heterostructure has influences on the 2DEG electron density and the electron mobility. For the AlN/GaN heterostructures with a 3-nm AlN barrier layer, the optimized thickness of the GaN cap layer is around 4 nm and the strained a-axis lattice constant of the AlN barrier layer is less than that of GaN. 相似文献
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