Simulation of plasma doping process by using the localized molecular dynamics method

Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data.     

若丹明B掺杂的SiO2凝胶的荧光光谱研究

以正硅酸乙酯（TEOS）和有机染料若丹明B（Rhodamine B)为原料，彩溶胶－凝胶方法（the sol-gel method)制备了若丹明B掺杂的SiO2凝胶，研究了SiO2凝胶的荧光光谱。报道了若丹明B在SiO2凝胶中的荧光光谱比在水中的荧光光谱发生红移，尤其在制备过程中的不同阶段，若丹明B掺杂SiO2凝胶的荧光光谱的峰位发生的一系列变化，从而得到了若丹明B在水中及若丹明B在SiO2凝胶制备过程之中，直至SiO2凝胶制备完毕的荧光光谱发生变化的全过程。还报道了在反应中的磁力搅抖阶段，采用回流过程和不采用回流过程两种方法时，对所得若丹明B掺杂SiO2凝胶的荧光光谱的影响。