Event-triggered design for discrete-time nonlinear systems with control constraints

Nonlinear Dynamics - In order to solve the constrained-input problem and reduce the computing resources, a novel event-triggered optimal control method is proposed for a class of discrete-time...     

Towards Fabrication of Atomic Dopant Wires via Monolayer Doping Patterned by Resist-Free Lithography

Fabrication of atomic dopant wires at large scale is challenging.We explored the feasibility to fabricate atomic dopant wires by nano-patterning self-assembled dopant carrying molecular monolayers via a resist-free lithographic approach.The resist-free lithography is to use electron beam exposure to decompose hydrocarbon contaminants in vacuum chamber into amorphous carbon that serves as an etching mask for nanopatterning the phosphorus-bearing monolayers.Dopant wires were fabricated in silicon by patterning diethyl vinylphosphonate monolayers into lines with a width ranging from 1 μm down to 8 nm.The dopants were subsequently driven into silicon to form dopant wires by rapid thermal annealing.Electrical measurements show a linear correlation between wire width and conductance,indicating the success of the monolayer patterning process at nanoscale.The dopant wires can be potentially scaled down to atomic scale if the dopant thermal diffusion can be mitigated.     

以学生为中心的递进式“精细化工”实验教学

针对学生实验课积极性不高、实验教学效果不理想的问题，对一门选修课"精细化工"的实验进行了重新思考和设计，让学生参与从实验具体内容制定、操作到结果讨论的整个过程，并首次以"递进式"实验的方式由学生参与第2次实验（基于前一个实验的改进和完善），使学生了解理论知识转化为可行实验方案的具体做法，切身体会在实验原理相同的情况下，实验方案的细微调整对实验结果的巨大影响。结果表明，这种"以学生为中心"的改进能让学生注重实验细节，同时关注实验失败的原因，并在第2次实验中及时修正。这为学生实验综合素质的培养提供了一种教学思路。     

An improved evaluation of the neutron background in the PandaX-Ⅱ experiment

In dark matter direct detection experiments,neutron is a serious source of background,which can mimic the dark matter-nucleus scattering signals.In this paper,we present an improved evaluation of the neutron background in the PandaX-II dark matter experiment by a novel approach.Instead of fully relying on the Monte Carlo simulation,the overall neutron background is determined from the neutron-induced high energy signals in the data.In addition,the probability of producing a dark-matter-like background per neutron is evaluated with a complete Monte Carlo generator,where the correlated emission of neutron(s)andγ(s)in the(α,n)reactions and spontaneous fissions is taken into consideration.With this method,the neutron backgrounds in the Run 9(26-ton-day)and Run 10(28-ton-day)data sets of PandaX-II are estimated to be(0.66±0.24)and(0.47±0.25)events,respectively.     

AlGaN基宽禁带半导体光电材料与器件

AlGaN基材料是带隙可调的直接带隙宽禁带半导体材料,是制备紫外(UV)光电子器件的理想材料.经过数十年的研究,目前已经在异质衬底外延生长AlGaN基材料、高效掺杂等方面取得了巨大进展.以此为基础,AlGaN基紫外光电器件制备领域也得到长足发展.在本综述中,主要介绍了高质量AlGaN基材料的MOCVD外延生长方法、掺杂方法以及近年来在紫外发光、紫外探测器件方面取得的进展.     

表面喷砂对有机玻璃沿面闪络性能影响

绝缘子表面粗糙处理是提升其沿面闪络性能的重要途径,表面粗糙化处理方式不当,极易带来表面结构不均匀,难以获得稳定耐压性能的绝缘材料。为提升绝缘子表面粗糙处理的均匀性,本文利用表面喷砂技术对圆柱形有机玻璃(PMMA)绝缘子进行了粗糙化处理研究,以球形二氧化硅(SiO2)颗粒为工作介质,研究了不同喷砂粒径、氢氟酸后处理等因素对绝缘材料表面形貌和组分的影响,并利用短脉冲高压测试平台对喷砂处理前后有机玻璃绝缘子样品进行了真空沿面闪络性能测试。研究结果表明,喷砂处理在有机玻璃表面形成了较为均匀的凹坑,HF酸能够有效去除表面残留的SiO2颗粒,具有表面喷砂粗糙结构的绝缘子沿面闪络电压得到了稳定提升,相较于未处理的绝缘子闪络电压提升了约80%。     

平面波输入下海水-海床-结构动力相互作用分析

海洋工程结构的地震反应分析是保证海洋工程结构地震安全的重要环节.由于其所处的复杂环境, 该问题涉及到流固耦合和土-结相互作用.本文基于海水、饱和海床、基岩流固耦合统一计算框架,采用Davidenkov模型和修正的Masing准则考虑饱和海床的非线性,在脉冲SV波垂直入射下, 进行了海域场地和海洋工程结构的动力响应分析. 首先,对比分析了线性自由场和非线性自由场输入情形的海域场地非线性反应,结果表明线性自由场输入时反应不合理,自由场分析和场地分析应该采用相一致的本构模型. 然后,对比分析了海床分别为线性和非线性情形时,海域场地以及海水-海床-结构体系的反应特征. 与线性海床情形相比,非线性对海床反应的影响主要由如下两方面因素控制: 一方面,非线性导致饱和海床模量减小, 饱和海床与基岩间的波阻抗比减小,由基岩到饱和海床间的反射系数和透射系数增加, 导致反应增大; 另一方面,非线性导致阻尼加大, 使海床反应减小. 对于本文算例而言,阻尼对非线性海床结果的影响占主导作用.      

基于相场描述的拉压不对称强度结构拓扑优化

运用了基于相场描述的拓扑优化方法，来寻找在拉伸和压缩中表现出不对称强度行为的连续体结构的最优布局。依据Drucker-Prager屈服准则和幂率插值方案，优化问题可以描述为在局部应力约束下的最小化结构的体积。用qp放松法来解决应力约束的奇异性，并采用基于P-norm函数的聚合方法对应力约束进行凝聚，该方法实现了约束个数的降低，同时引入了稳定转化法来处理大量的局部应力约束和高度非线性的应力行为，以修正应力，提高优化收敛的稳定性。在优化问题求解时，使用拉格朗日乘子法对目标函数和应力约束进行处理。利用伴随变量法进行灵敏度分析，并通过求解Allen-Cahn方程更新相场函数设计变量。数值算例证明了该优化模型和相应数值技术的有效性，相关算例还揭示了考虑拉压不同强度和考虑同拉压强度约束时得到的结构优化拓扑构型具有显著的差异。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.