在双模波色-爱因斯坦凝聚中实现纠缠态的控制

本探讨了一种实现对双模波色，爱因斯坦凝聚(BEC)中纠缠态控制的方案。通过应用外磁场，该粒子数空间的能级将会交叉。如果此时给它加上控制外场，就可以把一种量子态转化为在该空间中的任意量子态。     

一类平均曲率型抛物方程解的存在性和解的熄灭

在Rn有界域上考虑一类带有非线性迁移项的平均曲率型方程div{σ(|　Δu|2)　Δu}+b(u)·　Δu=0的第一类初边值问题.主要得到了弱解的存在性,并且给出了解的熄灭性质及解的L∞估计.     

Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures

Radio-frequency(RF) characteristics under ultra-low temperature of multi-finger partially depleted silicon-oninsulator(PD SOI) n-type metal-oxide-semiconductor field-effect transistors(nMOSFETs) with tunnel diode body-contact(TDBC) structure and T-gate body-contact(TB) structure are investigated in this paper.When operating at 77 K,TDBC device suppresses floating-body effect(FBE) as well as the TB device.For TB device and TDBC device,cut-off frequency(f_T) improves as the temperature decreases to liquid-helium temperature(77 K) while that of the maximum oscillation frequency(/max) is opposite due to the decrease of the unilateral power gain.While operating under 77 K,f_T and f_(max) of TDBC device reach to 125 GHz and 77 GHz,representing 8%and 15% improvements compared with those of TB device,respectively,which is mainly due to the lower parasitic resistances and capacitances.The results indicate that TDBC SOI MOSFETs could be considered as promising candidates for analog and RF applications over a wide range of temperatures and there is immense potential for the development of RF CMOS integrated circuits for cryogenic applications.