广义复合隐迭代格式逼近非扩张映像公共不动点

提出并使用如下广义复合隐迭代格式逼近非扩张映像族{Ti}Ni=1公共不动点:{xn=αnxn-1 (1-αn)Tnyn,yn=rnxn snxn-1 tnTnxn wnTnxn-1,rn sn tn wn=1,{αn},{rn},{sn},{tn},{wn}∈[0,1],这里Tn=TnmodN.该文提出的广义复合隐迭代格式包含了目前多种迭代格式,因此,所得强弱收敛定理推广及发展了Mann,Ishikawa,XuandOri,等许多作者的结果.     

关于变分不等式与不动点问题(英文)

In this paper,A strong convergence theorem for a finite family of nonexpansive mappings and relaxed cocoercive mappings based on an iterative method in the framework of Hilbert spaces is established.     

Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle, so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.     

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr0.6TiO3 Dielectric

We report on the fabrication and characterization of low-voltage indium-tin-oxide （ITO） thin-film transistors （TFTs） gated by a0.4Sr0.6TiO3 （BST） gate dielectric deposited at room temperature. The 400-nm-thick BST film shows a low leakage current density of 6 × 10^-8 A/cm^2 and a high specific capacitance of 83 nF/cm^2 （corresponding εr= 37）. The ITO TFTs gated by such BST dielectric operate in a depletion mode with an operation voltage of 5.0 V. The device exhibits a threshold voltage of -3.7 V, a subthreshold swing of 0.5 V/decade, a field effect mobility of 3.2cm^2/Vs and a current on/off ratio of 1.4× 10^4.     

高灵敏银纳米棒阵列对农药啶虫脒的表面增强拉曼散射快速检测

The determination of pesticide residue on agricultural products is increasingly important.Exposure to pesticides can cause severe acute reactions in humans,including aplastic anemia and leukemia.In this work,we developed a rapid and sensitive method to detect acetamiprid pesticide residue based on surface-enhanced Raman scattering.Silver nanorod (AgNR) arrays were fabricated by oblique angle deposition technology and were used as SERS substrates.Prior to detection,the AgNR arrays were cleaned with nitric acid solution or a mixture of methanol and acetone.Compared to the unwashed AgNR arrays,the AgNR arrays washed with methanol and acetone shows a signal enhancement 1000 times greater than the unwashed AgNR array due to the effective removal of the impurities on its surface.The limit of detection of acetamiprid was determined to be 0.05 mg/L.In addition,the molecular structure of acetamiprid was simulated and the corresponding vibration modes of the characteristic bands of acetamiprid were calculated by density function theory.To demonstrate its practical application,the AgNRs array substrates were applied successfully to the rapid identification of acetamiprid residue on a cucumber''s surface.These results confirmed possibility of utilizing the AgNRs SERS substrates as a new method for highly sensitive pesticide residue detection.